Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a semiconductor layer of a first conductivity type formed with a first trench;
a gate electrode buried in the first trench via an insulating film;
a source region of the first conductivity type disposed in a manner exposed on a surface of the semiconductor layer and contacting a first part of a side face of the first trench;
a channel region of a second conductivity type disposed on the source region on a back surface side relative to the semiconductor layer, in a manner contacting the source region and a second part of the side face of the first trench;
a drain region of the first conductivity type disposed on the channel region on the back surface side relative to the semiconductor layer, in a manner contacting the channel region and a bottom face of the first trench;
an active region that forms a channel in the channel region to perform a transistor operation;
an outer peripheral region disposed around the active region, anda surface insulating film disposed on the semiconductor layer in a manner extending across the active region and the outer peripheral region, and in the active region, formed to be thinner than a part in the outer peripheral region,wherein in the surface insulating film, a contact hole that selectively exposes the source region is formed substantially over the entire surface of the semiconductor layer.
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Abstract
A semiconductor device of the present invention includes a gate electrode buried in a gate trench of a first conductivity-type semiconductor layer, a first conductivity-type source region, a second conductivity-type channel region, and a first conductivity-type drain region formed in the semiconductor layer, a second trench selectively formed in a source portion defined in a manner containing the source region in the surface of the semiconductor layer, a trench buried portion buried in the second trench, a second conductivity-type channel contact region selectively disposed at a position higher than that of a bottom portion of the second trench in the source portion, and electrically connected with the channel region, and a surface metal layer disposed on the source portion, and electrically connected to the source region and the channel contact region.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type formed with a first trench; a gate electrode buried in the first trench via an insulating film; a source region of the first conductivity type disposed in a manner exposed on a surface of the semiconductor layer and contacting a first part of a side face of the first trench; a channel region of a second conductivity type disposed on the source region on a back surface side relative to the semiconductor layer, in a manner contacting the source region and a second part of the side face of the first trench; a drain region of the first conductivity type disposed on the channel region on the back surface side relative to the semiconductor layer, in a manner contacting the channel region and a bottom face of the first trench; an active region that forms a channel in the channel region to perform a transistor operation; an outer peripheral region disposed around the active region, and a surface insulating film disposed on the semiconductor layer in a manner extending across the active region and the outer peripheral region, and in the active region, formed to be thinner than a part in the outer peripheral region, wherein in the surface insulating film, a contact hole that selectively exposes the source region is formed substantially over the entire surface of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification