Gas detector with a thermally uniform MEMS die

• US 10,273,149 B2
• Filed: 07/28/2016
• Issued: 04/30/2019
• Est. Priority Date: 07/28/2015
• Status: Active Grant

• Current Assignee: Carrier Corporation (Carrier Global Corporation)
• Original Assignee: Carrier Corporation (Carrier Global Corporation)
• Inventors: Potasek, David P., Christenson, John Carl, Childress, Marcus Allen
• Primary Examiner(s): Chin, Edward
• Application Number:
  US15/222,754
• Publication Number:
  US 20170029270A1
• Time in Patent Office: 1,006 Days
• Field of Search: 422 95, 7320411
• CPC Class Codes: B81B 2201/0214 Biosensors; Chemical sensors
• CPC Class Codes: B81B 7/0087 On-device systems and sensors for controlling, regulating or monitoring
• CPC Class Codes: B81B 7/0096 by heating
• CPC Class Codes: G01N 27/128 Microapparatus

Abstract

A microelectromechanical systems die including a thermally conductive substrate, at least one insulator film disposed on the thermally conductive substrate, a sensor material disposed on the at least one insulator film, and a heater circumferentially disposed around the sensor material.

Claims

1. A microelectromechanical systems die comprising:

a thermally conductive substrate;

at least one insulator film disposed on the thermally conductive substrate;

a sensor material that detects a presence of a gas as the gas passes over the sensor material, wherein the sensor material is disposed on the at least one insulator film;

at least one electrode in contact with the sensor material;

a heater; and

a temperature sensor located between the heater and the sensor material, wherein the heater is circumferentially disposed around the sensor material and the temperature sensor, wherein the temperature sensor surrounds only three sides of the sensor material such that the temperature sensor does not cross over the at least one electrode or the heater.

2. The microelectromechanical systems die of claim 1, wherein the thermally conductive substrate is composed of silicon.

3. The microelectromechanical systems die of claim 1, wherein the sensor material is substantially centered on the at least one insulator film.

4. The microelectromechanical systems die of claim 1, further comprising:

at least one bond pad disposed on the at least one insulator film; and

at least one passive heat exchanger operably coupled to the at least one bond pad.

5. The microelectromechanical systems die of claim 4, wherein the heater substantially surrounds the at least one bond pad such that there is no direct thermal path between the at least one bond pad and the sensor material.

6. The microelectromechanical systems die of claim 4, wherein the heater is positioned such that there is no direct thermal path between the at least one bond pad and the sensor material.

7. The microelectromechanical systems die of claim 4, wherein the at least one passive heat exchanger is located on the periphery of the at least one insulator film.

8. The microelectromechanical systems die of claim 4, wherein the at least one passive heat exchanger comprises wire bonds.

9. The microelectromechanical systems die of claim 1, wherein the at least one insulator film encloses the temperature sensor and the heater.

10. The microelectromechanical systems die of claim 1 further comprising a diffusion barrier constructed and arranged to prevent diffusion between the at least one electrode and the sensor material.

11. The microelectromechanical systems die of claim 1 further comprising a diffusion barrier constructed and arranged to prevent diffusion between at least one of the at least one electrode, the temperature sensor, and the heater and the thermally conductive substrate.

12. The microelectromechanical systems die of claim 1, wherein the heater includes a linewidth dimension.

13. The microelectromechanical systems die of claim 12, wherein the linewidth dimension is less than or equal to approximately 100 micrometers.

14. The microelectromechanical systems die of claim 1 further comprising an aperture formed in the at least one insulator film to provide a contact point for testing the microelectromechanical systems die.

15. A gas detector package comprising:

a microelectromechanical systems die comprising;

a thermally conductive substrate;

at least one insulator film disposed on the thermally conductive substrate;

a sensor material that detects a presence of a gas as the gas passes over the sensor material, wherein the sensor material is disposed on the at least one insulator film;

at least one electrode in contact with the sensor material;

a heater; and

a temperature sensor located between the heater and the sensor material, wherein the heater is circumferentially disposed around the sensor material and the temperature sensor, wherein the temperature sensor surrounds only three sides of the sensor material such that the temperature sensor does not cross over the at least one electrode or the heater.

16. The gas detector package of claim 15, wherein the thermally conductive substrate is composed of silicon.

17. The gas detector package of claim 15, wherein the sensor material is located substantially centered on the sensing surface.

18. The gas detector package of claim 15, further comprising:

at least one bond pad disposed on the at least one insulator film; and

at least one passive heat exchanger operably coupled to the at least one bond pad.

19. The gas detector package of claim 18, wherein the heater substantially surrounds the at least one bond pad such that there is no direct thermal path between the at least one bond pad and the sensor material.

20. The gas detector package of claim 18, wherein the heater is positioned such that there is no direct thermal path between the at least one bond pad and the sensor material.

21. The gas detector package of claim 18, wherein the at least one passive heat exchanger is located on the periphery of the at least one insulator film.

22. The gas detector package of claim 15, wherein the at least one insulator film encloses the temperature sensor and the heater.

23. The gas detector package of claim 15 further comprising a diffusion barrier constructed and arranged to prevent diffusion between the at least one electrode and the sensor material.

24. The gas detector package of claim 15 further comprising a diffusion barrier constructed and arranged to prevent diffusion between at least one of the at least one electrode, the temperature sensor, and the heater and the thermally conductive substrate.

25. The gas detector package of claim 15, wherein the heater includes a linewidth dimension.

26. The gas detector package of claim 25, wherein the linewidth dimension is less than or equal to approximately 100 micrometers.

27. The gas detector package of claim 15 further comprising an aperture formed in the at least one insulator film to provide a contact point for testing the microelectromechanical systems die.