Method for manufacturing microelectromechanical system structure having a cavity and through-holes of different widths
First Claim
1. A method for manufacturing a microelectromechanical system (MEMS) structure, comprising:
- forming a first trench and a second trench in a MEMS substrate by performing a main etching process;
etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench by performing a first step of an over-etching process; and
etching the MEMS substrate through the extended second trench to form a second through hole by performing a second step of the over-etching process,wherein a width of the first trench is greater than a width of the second trench, and a height of the first trench is greater than ¾
of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔
of the height of the MEMS substrate.
1 Assignment
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Accused Products
Abstract
Methods for manufacturing MEMS structures are provided. The method includes forming a first trench and a second trench in a MEMS substrate by performing a main etching process and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench by performing a first step of an over-etching process. The method further includes etching the MEMS substrate through the extended second trench to form a second through hole by performing a second step of the over-etching process. In addition, a width of the first trench is greater than a width of the second trench, and a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔ of the MEMS substrate.
1 Citation
20 Claims
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1. A method for manufacturing a microelectromechanical system (MEMS) structure, comprising:
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forming a first trench and a second trench in a MEMS substrate by performing a main etching process; etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench by performing a first step of an over-etching process; and etching the MEMS substrate through the extended second trench to form a second through hole by performing a second step of the over-etching process, wherein a width of the first trench is greater than a width of the second trench, and a height of the first trench is greater than ¾
of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔
of the height of the MEMS substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a microelectromechanical system (MEMS) structure, comprising:
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disposing a MEMS substrate over a semiconductor substrate, wherein the MEMS substrate comprises a first region and a second region over a recess of the semiconductor substrate; removing a top portion of the first region and a top portion of the second region of the MEMS substrate by performing a main etching process; removing a bottom portion of the first region and a middle portion of the second region by performing a first step of an over-etching process, thereby etching through the first region of the MEMS substrate to form a first through hole; and removing a bottom portion of the second region by performing a second step of the over-etching process, thereby etching through the second region of the MEMS substrate to form a second through hole, wherein a width of the first region is greater than a width of the second region, and a ratio of an etching rate of the bottom portion of the second region in the second step of the over-etching process to an etching rate of the middle portion of the second region in the first step of the over-etching process is in a range from about 1.4 to about 1.8. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a microelectromechanical system (MEMS) structure, comprising:
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etching a top portion of a first region of a MEMS substrate to form a first trench and a top portion of a second region of the MEMS substrate to form a second trench; etching a bottom portion of the first region through the first trench to form a first through hole and a middle portion of the second region through the second trench to form an extended second trench by performing a first step of an over-etching process; etching a bottom portion of the second region through the extended second trench to form a second through hole by performing a second step of the over-etching process, wherein a first width of the first region is greater than a width of the second region, a difference between the first width of the first region and the second width of the second region is in a range from about 0.5 μ
m to about 2 μ
m, and an ratio of an etching rate of the bottom portion of the second region to an etching rate of the middle portion of the second region is greater than about 1.1. - View Dependent Claims (18, 19, 20)
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Specification