Gas detection module and gas sensor thereof

• US 10,274,471 B2
• Filed: 03/28/2017
• Issued: 04/30/2019
• Est. Priority Date: 11/15/2016
• Status: Active Grant

• Current Assignee: National Sun Yat-sen University
• Original Assignee: National Sun Yat-sen University
• Inventors: Chang, Ting-Chang, Chen, Hua-Mao, Chiang, Hsiao-Cheng, Tsao, Yu-Ching, Chen, Min-Chen
• Primary Examiner(s): Gordon, Brian R
• Application Number:
  US15/471,760
• Publication Number:
  US 20180136154A1
• Time in Patent Office: 763 Days
• Field of Search: 422 83- 88, 73 233, 73 234, 7333505
• CPC Class Codes: G01N 27/4141 specially adapted for gases
• CPC Class Codes: G01N 33/0047 for organic compounds
• CPC Class Codes: G01N 33/4972 Determining alcohol content for vehicle safety devices B60K28/06
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A gas detection module is provided with a convenient detection mechanism of the alcohol gas. The gas detection module may include a gas sensor and a detection circuit. The gas sensor includes a substrate, a gate, an insulating layer, an active layer, a source and a drain. The gate is disposed on the substrate. The insulating layer is disposed on the gate and the substrate. The active layer is disposed on the insulating layer. Each of the source and the drain is partially arranged on the active layer and extends to the insulating layer. The active layer is exposed from between the source and the drain. The detection circuit is electrically connected to the source of the gas sensor. Based on this, the deficiency of the conventional gas detection module can be overcome.

Claims

1. A gas detection module comprising:

a gas sensor having a substrate, a gate, an insulating layer, an active layer, a source and a drain, wherein the gate is disposed on the substrate, wherein the insulating layer is disposed on the gate and the substrate, wherein the active layer is disposed on the insulating layer, wherein each of the source and the drain is partially arranged on the active layer and extends to the insulating layer, and wherein the active layer is exposed from between the source and the drain; and

a detection circuit comprising an operational amplifier, a resistor and an electrical sensor, wherein the operational amplifier comprises two input ends and an output end, wherein a first one of the two input ends is electrically connected to a ground end, wherein a second one of the two input ends is electrically connected to the source of the gas sensor, wherein the second one of the two input ends is electrically connected to the output end via the resistor, and wherein the electrical sensor is electrically connected between the output end and the ground end.

2. The gas detection module as claimed in claim 1, wherein the active layer is made of a material which is an oxide of at least one of elements including hafnium, stannum, zinc, gallium, tungsten, indium, silicon and aluminum.

3. The gas detection module as claimed in claim 2, wherein a concentration ratio between oxygen ions and non-oxygen ions of the active layer is 1:

1.

4. The gas detection module as claimed in claim 2, wherein the active layer is formed by indium gallium zinc oxide.

5. The gas detection module as claimed in claim 4, wherein a content ratio of indium, gallium, zinc and oxygen is 1:

1;

1;

4.

6. The gas detection module as claimed in claim 1, wherein the active layer has an energy gap of 1.5-4.5 eV.

7. The gas detection module as claimed in claim 1, wherein the gas sensor is a back-channel-etch thin-film transistor.

8. The gas detection module as claimed in claim 1, wherein the source outputs an induced electric current which is converted into an induced voltage by the resistor, wherein the electrical sensor detects the induced voltage.

9. The gas detection module as claimed in claim 8, wherein the electrical sensor outputs an indication signal when the induced electric current is larger than a threshold current value by a predetermined amount.

10. A gas sensor comprising:

a substrate, a gate, an insulating layer, an active layer, a source and a drain, wherein the gate is disposed on the substrate, wherein the insulating layer is disposed on the gate and the substrate, wherein the active layer is disposed on the insulating layer, wherein each of the source and the drain is partially arranged on the active layer and extends to the insulating layer, and wherein the active layer is exposed from between the source and the drain.

11. The gas sensor as claimed in claim 10, wherein the active layer is made of a material which is an oxide of at least one of elements including hafnium, stannum, zinc, gallium, tungsten, indium, silicon and aluminum.

12. The gas sensor as claimed in claim 11, wherein a concentration ratio between oxygen ions and non-oxygen ions of the active layer is 1:

1.

13. The gas sensor as claimed in claim 11, wherein the active layer is formed by indium gallium zinc oxide.

14. The gas sensor as claimed in claim 13, wherein a content ratio of indium, gallium, zinc and oxygen is 1:

1;

1;

4.

15. The gas sensor as claimed in claim 10, wherein the active layer has an energy gap of 1.5-4.5 eV.

16. The gas sensor as claimed in claim 10, wherein the gas sensor is a back-channel-etch thin-film transistor.