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Microelectromechanical sensor device with reduced stress sensitivity

  • US 10,274,512 B2
  • Filed: 06/14/2016
  • Issued: 04/30/2019
  • Est. Priority Date: 10/14/2015
  • Status: Active Grant
First Claim
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1. A MEMS sensor device comprising:

  • a substrate having a top surface extending in a horizontal plane;

    an inertial mass suspended over the substrate;

    elastic coupling elements elastically coupled to the inertial mass and enabling inertial movement of the inertial mass with respect to the substrate as a function of a quantity to be detected along a sensing axis in the horizontal plane;

    sensing electrodes capacitively coupled to the inertial mass and forming at least one sensing capacitor;

    a suspension structure, the sensing electrodes rigidly coupled to first portions of the suspension structure, the inertial mass being elastically coupled to second portions of the suspension structure by the elastic coupling elements, the suspension structure including electrical-insulation regions that electrically insulate the first portions of the suspension structure from the second portions of the suspension structure, the electrical-insulation regions forming reverse-biased PN junctions with the first portions of the suspension structure and the second portions of the suspension structure adjacent to the electrical-insulation regions;

    elastic suspension elements coupled to the suspension structure; and

    an anchorage structure fixed with respect to said substrate, the suspension structure being coupled to the anchorage structure by the elastic suspension elements.

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