Methods of forming photonic devices

• US 10,274,678 B1
• Filed: 03/26/2018
• Issued: 04/30/2019
• Est. Priority Date: 03/26/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Liu, Tao-Cheng, Hung, Tsai-Hao, Kuo, Shih-Chi
• Primary Examiner(s): Ho, Anthony
• Application Number:
  US15/936,042
• Time in Patent Office: 400 Days
• CPC Class Codes: G02B 5/1819 Plural gratings positioned on the same surface, e.g. array of gratings plural diffractive elements positioned sequentially along the optical path G02B27/4272
• CPC Class Codes: G02B 5/1857 using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

Claims

1. A method, comprising:

forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer;

forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and

performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

2. The method of claim 1, further comprising:

using the at least one subgroup of the second plurality of recessed regions as a mask to etch the substrate thereby forming the third plurality of trenches.

3. The method of claim 2, wherein the numbers of second layers through which the at least one subgroup of the second plurality of recessed regions extend correspond to the depths of the third plurality of trenches in the substrate.

4. The method of claim 1, wherein the forming a second plurality of recessed regions in the first plurality of tiers comprises:

(a) exposing a fourth plurality of portions of the first layer at a first one of the first plurality of tiers;

(b) exposing a fifth plurality of portions of the first layer at a second one of the first plurality of tiers, wherein the second one is one tier lower than the first one, and wherein a number of the fifth plurality is less than a number of the fourth plurality; and

(c) repeating the steps (a) and (b) until the at least one subgroup of the second plurality of recessed regions are formed.

5. The method of claim 4, wherein the step (a) comprises:

etching portions of the second dummy layer at the first one of the first plurality of tiers that were disposed directly above the fourth plurality of portions of the first layer at the first one of the first plurality of tiers.

6. The method of claim 5, wherein the step (b) comprises:

etching portions of the first dummy layer at the first one of the first plurality of tiers and portions of the second dummy layer at the second one of the first plurality of tiers that were disposed directly above the fifth plurality of portions of the first layer at the first one of the first plurality of tiers, respectively.

7. The method of claim 1, further comprising:

filling the third plurality of trenches with a dielectric material.

8. The method of claim 1, wherein the first layers across the first plurality of tiers are etch stop layers.

9. A method, comprising:

forming N tiers of first and second dummy layers over a substrate, wherein the second dummy layer is above the first dummy layer in each tier;

forming N recessed regions across the N tiers that extend through respective different numbers of second dummy layers; and

concurrently forming N trenches with respective different depths in the substrate using the N recessed regions across the N tiers,

wherein N is an integer equal to or greater than 2.

10. The method of claim 9, wherein the forming N trenches in the substrate comprises:

etching the substrate through the N recessed regions on the substrate.

11. The method of claim 9, further comprising:

filling the N trenches with a dielectric material.

12. The method of claim 9, wherein the numbers of second dummy layers that the N recessed regions extend through correspond to the depths of the N trenches.

13. The method of claim 9, wherein the forming N recessed regions across the N tiers comprises:

(a) forming n first recessed regions by etching n portions of the second dummy layers at n^th tier,

(b) forming n−

1 second recessed regions by etching n−

1 portions of the second dummy layers at n−

1^th tier through n—

1 of the n first recessed regions,

wherein n is equal to or less than N.

14. The method of claim 13, further comprising:

repeating steps (a) and (b) until n is equal to 2.

15. The method of claim 13, wherein the first layers across the N tiers are etch stop layers.