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Signal relay board for power semiconductor modules

  • US 10,276,386 B2
  • Filed: 06/29/2017
  • Issued: 04/30/2019
  • Est. Priority Date: 08/17/2016
  • Status: Active Grant
First Claim
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1. A signal relay board for power semiconductor modules configured to provide connection between a plurality of power semiconductor modules which houses a first semiconductor device and a second semiconductor device connected in series and a drive unit which drives the first semiconductor device and the second semiconductor device, the signal relay board for power semiconductor modules comprising:

  • a multiphase wire portion in which a first wire layer, a second wire layer, a third wire layer, and a fourth wire layer are stacked in this order, wherein the first wire layer, the second wire layer, the third wire layer, and the fourth wire layer are respectively assigned with a first control wire layer which serves as a path to provide a control signal to the first semiconductor device of the plurality of power semiconductor modules, a first ground wire layer which serves as a path to provide a ground potential to a low potential side terminal of the first semiconductor device of the plurality of power semiconductor modules, a second control wire layer which serves as a path to provide a control signal to the second semiconductor device of the plurality of power semiconductor modules, and a second ground wire layer which serves as a path to provide a ground potential to the second semiconductor device of the plurality of power semiconductor modules.

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