Metal shielding layer in backside illumination image sensor chips and methods for forming the same
First Claim
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1. A back-side illuminated image sensing device comprising:
- a semiconductor substrate;
a first photo-sensitive device at a first surface of the semiconductor substrate;
an adhesion layer on a second surface of the semiconductor substrate opposite the first surface of the semiconductor substrate, wherein substantially all grains in the adhesion layer have sizes smaller than about 50 Å
, and wherein the adhesion layer comprises nitrogen and a metal; and
a metal shielding layer contacting the adhesion layer, wherein the adhesion layer is disposed between the metal shielding layer and the semiconductor substrate.
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Abstract
A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
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Citations
20 Claims
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1. A back-side illuminated image sensing device comprising:
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a semiconductor substrate; a first photo-sensitive device at a first surface of the semiconductor substrate; an adhesion layer on a second surface of the semiconductor substrate opposite the first surface of the semiconductor substrate, wherein substantially all grains in the adhesion layer have sizes smaller than about 50 Å
, and wherein the adhesion layer comprises nitrogen and a metal; anda metal shielding layer contacting the adhesion layer, wherein the adhesion layer is disposed between the metal shielding layer and the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A back-side illuminated image sensing device comprising:
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a semiconductor substrate; a first photo-sensitive device at a first surface of the semiconductor substrate; an adhesion layer over a second surface of the semiconductor substrate opposite the first surface, wherein the adhesion layer comprises a combination of nitrogen and a metal; and a metal shielding layer over the adhesion layer, wherein the metal shielding layer is further disposed over and aligned with the first photo-sensitive device, and wherein the back-side illuminated image sensing device has a gray level uniformity of less than 7%, the gray level uniformity is a ratio of a difference between a gray level at an edge of the semiconductor substrate and a gray level at a center of the semiconductor substrate to the gray level at the center of the semiconductor substrate. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A device comprising:
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a substrate comprising a first image sensor at a first surface of the substrate; an adhesion layer over a second surface of the substrate opposite the first surface, wherein the adhesion layer comprises a compound of nitrogen and a metal, and wherein substantially all grains in the adhesion layer are smaller than about 50 Å
, and wherein the adhesion layer is patterned so that the adhesion layer does not extend directly over the first image sensor; anda metal shielding layer over the adhesion layer, wherein the metal shielding layer is patterned such that the metal shielding layer does not extend directly over the first image sensor. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification