Ultraviolet reflective rough adhesive contact
First Claim
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1. A device comprising:
- a first semiconductor layer formed of a first group III nitride material;
a contact to the first semiconductor layer;
a second semiconductor layer located between the first semiconductor layer and the contact, wherein the second semiconductor layer comprises a second group III nitride material having a gallium molar fraction greater than 0.8, and wherein a composition of the first semiconductor layer is laterally homogeneous and a composition of the second semiconductor layer is laterally inhomogeneous, and wherein an interface between the second semiconductor layer and the contact includes a first roughness profile having a characteristic height between 3 and 20 nanometers and a characteristic width within a range of approximately 0.1 micron to approximately 50 microns.
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Abstract
A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
44 Citations
20 Claims
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1. A device comprising:
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a first semiconductor layer formed of a first group III nitride material; a contact to the first semiconductor layer; a second semiconductor layer located between the first semiconductor layer and the contact, wherein the second semiconductor layer comprises a second group III nitride material having a gallium molar fraction greater than 0.8, and wherein a composition of the first semiconductor layer is laterally homogeneous and a composition of the second semiconductor layer is laterally inhomogeneous, and wherein an interface between the second semiconductor layer and the contact includes a first roughness profile having a characteristic height between 3 and 20 nanometers and a characteristic width within a range of approximately 0.1 micron to approximately 50 microns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A device comprising:
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an active region configured to sense or emit ultraviolet light; a first semiconductor layer formed on a p-type side of the active region; an ultraviolet reflective contact to the first semiconductor layer; a second p-type semiconductor layer located between the first semiconductor layer and the contact, wherein an interface between the second semiconductor layer and the contact includes a first roughness profile with a characteristic height and a characteristic width, wherein the characteristic height is an average vertical distance between adjacent crests and valleys of the first roughness profile and is between 3 and 20 nanometers, and wherein the characteristic width is an average lateral distance between adjacent crests and valleys of the first roughness profile and is within a range of approximately 0.1 micron to approximately fifty microns. - View Dependent Claims (12, 13, 14, 15)
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16. A device comprising:
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a first semiconductor layer formed of a first group III nitride material; a contact to the first semiconductor layer, wherein an interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height between 3 and 20 nanometers and a characteristic width within a range of approximately 0.1 micron to approximately 50 microns; and an interlayer located between the first semiconductor layer and the contact, wherein the interlayer comprises a plurality of islands each having a closed boundary that is separate from the first semiconductor layer and the contact, wherein at least some of the plurality of islands comprise a metal-based alloy having a work function higher than 4.5 eV and at least some of the plurality of islands comprise a metal that provides an electrical contact having a specific contact resistivity lower than 10−
4 ohm*cm2 to group III nitride materials. - View Dependent Claims (17, 18, 19, 20)
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Specification