Oxygen treatment for nitride etching

• US 10,283,324 B1
• Filed: 10/24/2017
• Issued: 05/07/2019
• Est. Priority Date: 10/24/2017
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Zhijun, Wang, Anchuan, Huang, Jiayin
• Primary Examiner(s): Malek, Maliheh
• Application Number:
  US15/792,303
• Publication Number:
  US 20190122865A1
• Time in Patent Office: 560 Days
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45529 specially adapted for making a layer stack of alternating different compositions or gradient compositions
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels

Abstract

Exemplary methods for laterally etching silicon nitride may include flowing oxygen-containing plasma effluents into a processing region of a semiconductor processing chamber. A substrate positioned within the processing region may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents. The methods may include flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor. The methods may include forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may include flowing the plasma effluents into the processing region of the semiconductor processing chamber. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench.

Claims

1. An etching method comprising:

flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber;

forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents;

flowing the oxygen-containing plasma effluents into a processing region of the semiconductor processing chamber, wherein a substrate is positioned within the processing region, and wherein the substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide;

passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents;

flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor, wherein the passivating is performed for a first period of time prior to flowing the fluorine-containing precursor;

forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor;

flowing the plasma effluents into the processing region of the semiconductor processing chamber; and

laterally etching the layers of silicon nitride from sidewalls of the trench.

2. The etching method of claim 1, further comprising repeating the method for at least one additional cycle.

3. The etching method of claim 1, wherein the stacked layers comprise at least 50 layers of alternating layers of silicon nitride and silicon oxide, and wherein the trench is characterized by an aspect ratio of greater than or about 100:

1.

4. The etching method of claim 1, wherein the lateral etching is performed at a temperature of between about −

100°

C. and about 100°

C.

5. The etching method of claim 4, wherein the temperature is between about 0°

C. and about 50°

C.

6. The etching method of claim 1, wherein the lateral etching is performed at a chamber operating pressure of less than or about 1 Torr.

7. The etching method of claim 1, wherein the passivating is performed at a chamber operating pressure of greater than or about 1 Torr.

8. The etching method of claim 1, wherein the passivating oxidizes a portion of the silicon nitride.

9. The etching method of claim 1, wherein the first period of time is greater than or about one minute.

10. The etching method of claim 9, wherein the etching is performed for a second period of time greater than the first period of time.

11. The etching method of claim 1, wherein a layer of silicon nitride at an upper region of the trench and a layer of silicon nitride at a lower region of the trench differ in lateral etch amounts by less than about 2 nm.

12. An etching method comprising:

flowing an oxygen-containing precursor into a first remote plasma region of a semiconductor processing chamber;

forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents;

flowing the oxygen-containing plasma effluents into a processing region of the semiconductor processing chamber, wherein a substrate is positioned within the processing region, and wherein the substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide;

passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents for a first period of time;

subsequent the first period of time, flowing a fluorine-containing precursor into a second remote plasma region while maintaining the flow of the oxygen-containing precursor into the first remote plasma region;

forming a plasma within the second remote plasma region to generate plasma effluents of the fluorine-containing precursor while continuing to form a plasma within the first remote plasma region to generate plasma effluents of the oxygen-containing precursor;

flowing the plasma effluents of the fluorine-containing precursor and the plasma effluents of the oxygen-containing precursor into the processing region of the semiconductor processing chamber; and

laterally etching the layers of silicon nitride from sidewalls of the trench.

13. The etching method of claim 12, further comprising repeating the method for at least one additional cycle.

14. The etching method of claim 12, wherein the first remote plasma region and the second remote plasma region are the same region of the semiconductor processing chamber.

15. The etching method of claim 12, wherein a bottom of the trench is at least partially oxidized along with the layers of silicon nitride, and wherein the bottom of the trench is etched less than or about 5 nm.

16. The etching method of claim 12, wherein a temperature within the semiconductor processing chamber during the etching method is greater than or about 0°

C.

17. The etching method of claim 12, wherein the first remote plasma region comprises a remote plasma system (“

RPS”

) unit fluidly coupled with an inlet to the semiconductor processing chamber.

18. The etching method of claim 12, wherein the second remote plasma region comprises a capacitively-coupled plasma region physically separated from the processing region by at least one electrode of the capacitively-coupled plasma region.