Method of reforming insulating film deposited on substrate with recess pattern
First Claim
1. A method of reforming a conformal insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, comprising:
- (i) providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a wet-etching property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate;
(ii) adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and
(iii) applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls, without forming a film, to improve the property of the sidewall portion of the film.
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Accused Products
Abstract
A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.
2748 Citations
21 Claims
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1. A method of reforming a conformal insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, comprising:
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(i) providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a wet-etching property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; (ii) adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and (iii) applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls, without forming a film, to improve the property of the sidewall portion of the film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification