Three terminal solid state plasma monolithic microwave integrated circuit

• US 10,283,465 B2
• Filed: 11/28/2016
• Issued: 05/07/2019
• Est. Priority Date: 01/15/2016
• Status: Active Grant

• Current Assignee: Plasma Antennas Limited
• Original Assignee: Plasma Antennas Limited
• Inventors: Keeton, Richard Brooke, Harper, Ruth Elizabeth, Hayes, David
• Primary Examiner(s): Tobergte, Nicholas J
• Application Number:
  US16/065,939
• Publication Number:
  US 20190019768A1
• Time in Patent Office: 890 Days
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2223/6683 for monolithic microwave integrated circuit [MMIC]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/2518 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/82005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 27/0814 Diodes only
• CPC Class Codes: H01L 27/1021 including diodes only
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1423 Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01P 1/15 : by semiconductor devices

Abstract

A solid state plasma monolithic microwave integrated circuit having single or multiple elemental devices with at least three terminals operating within the microwave, millimeter wave or terahertz bands, that can be configured within a parallel plate structure, which solid state plasma monolithic microwave integrated circuit comprises: (i) a semiconductor dielectric substrate (3); (ii) parallel plates (1, 2) which comprise an upper conducting parallel plate (1) and a lower conducting parallel plate (2) and which parallel plates (1, 2) are used to guide an electromagnetic wave; (iii) an isolating trench which is between the parallel plates (1, 2), and which is used to contain a solid state plasma; (iv) a distinct p-doped region and a distinct n-doped region which are within a first semiconductor region defined by the isolating trench below the upper conducting parallel plate (1), and which are connected to two electrical bias terminals, where at least one electrical bias terminal forms a radio frequency short to the upper parallel plate (1); and a p or n doped region within a second semiconductor region defined by the isolating trench above the lower conducting parallel plate (2) and connected to a third electrical bias terminal, where the third electrical bias terminal forms a radio frequency short to the lower conducting parallel plate (2), and wherein; a solid state plasma is able to be controlled by voltage biasing of the three electrical bias terminals to either reflect, absorb or transmit an electromagnetic wave.

Claims

1. A solid state plasma monolithic microwave integrated circuit having single or multiple elemental devices with at least three terminals operating within the microwave, millimeter wave or terahertz bands, that can be configured within a parallel plate structure, which solid state plasma monolithic microwave integrated circuit comprises:

(i) a semiconductor dielectric substrate;

(ii) parallel plates which comprise an upper conducting parallel plate and a lower conducting parallel plate, and which parallel plates are used to guide an electromagnetic wave;

(iii) an isolating trench which is between the parallel plates, and which is used to contain a solid state plasma;

(iv) a distinct p-doped region and a distinct n-doped region which are within a first semiconductor region defined by the isolating trench below the upper conducting parallel plate, and which are connected to two electrical bias terminals, where at least one electrical bias terminal forms a radio frequency short to the upper parallel plate; and

(v) a p or n doped region within a second semiconductor region defined by the isolating trench above the lower conducting parallel plate and connected to a third electrical bias terminal, where the third electrical bias terminal forms a radio frequency short to the lower conducting parallel plate, and wherein;

(vi) a solid state plasma is able to be controlled by voltage biasing of the three electrical bias terminals to either reflect, absorb or transmit an electromagnetic wave.

2. A solid state plasma monolithic microwave integrated circuit according to claim 1 in which the solid state material is high resistivity silicon.

3. A solid state plasma monolithic microwave integrated circuit according to claim 1 in which the elemental devices are arranged individually so as to follow a set of geometric curves approximating to a continuous reflecting surface.

4. A solid state plasma monolithic microwave integrated circuit according to claim 1 and which is configured to follow a sequence of temperature compatible silicon processing stages applied to a high resistivity silicon wafer which progressively creates the radio frequency monolithic microwave integrated circuit.

5. A solid state plasma monolithic microwave integrated circuit according to claim 4 in which the silicon processing is divided into five successive processing stages of:

(a) preparation of a silicon wafer to facilitate future processing and efficient parallel plate operation;

(b) fabrication of isolated plasma devices on silicon wafers;

(c) fabrication of multi-layer metal to allow an interconnect between the plasma generating devices and to create the radio frequency device ports;

(d) etching of the silicon wafer and subsequent backside metallisation to form a parallel plate radio frequency structure; and

(e) precision cutting of the silicon wafer to produce isolated plasma beam-forming devices.

6. A solid state plasma monolithic microwave integrated circuit according to claim 5 in which a silicon-on-insulator wafer is configured as a high resistivity device wafer and a handle wafer which have been anodically bonded with a separating layer of silicon dioxide that is able to be used as chemical or reactive ion etch stop.

7. A solid state plasma monolithic microwave integrated circuit according to claim 6 in which the upper and lower surfaces of the device wafer have been selectively amorphised to create a pattern of treated circular regions suitable for the subsequent fabrication of annular elemental plasma devices, so as to reduce the degree of accumulation of surface charge and thereby reduce the ohmic losses associated with parallel plate, silicon dielectric waveguide operation surrounding the elemental plasma devices.

8. A solid state plasma monolithic microwave integrated circuit according to claim 7 in which the upper and lower surfaces of the device wafer have been selectively amorphsised by ion bombardment, or by selective deposition of amorphised silicon.

9. A solid state plasma monolithic microwave integrated circuit according to claim 7 in which a buried layer under the silicon dioxide layer in the device wafer has been selectively doped in circular regions to facilitate future fabrication of circular ohmic contact associated with the elemental devices.

10. A solid state plasma monolithic microwave integrated circuit according to claim 9 in which a dry etch process was used to create an annular trench around elemental devices under fabrication, followed by the deposition of a high resistivity oxide layer on the walls of the trench to minimise the electron-hole surface recombination rate when a solid state plasma is generated, succeeded by the filling of the trench with amorphous silicon or polysilicon to re-establish mechanical integrity of the device wafer.

11. A solid state plasma monolithic microwave integrated circuit according to claim 10 in which surface PiN diodes are formed from an outer implanted region surrounding an inner implanted region, concentric with and inside cylindrical walls of the isolating trench.

12. A solid state plasma monolithic microwave integrated circuit according to claim 1 in which a first layer of metal is deposited to form the top of a parallel plate waveguide and selectively etched then covered with an insulating layer which is also selectively etched to allow a second interconnecting layer of metal to be applied that connects the solid state plasma elements in adjacent groups, on which an additional layer of selectively etched insulating material and a third metal layer are added to further connect groups of elements together and to bonding pads, and in which the interconnection is in series, parallel or a combination of both.

13. A solid state plasma monolithic microwave integrated circuit according to claim 12 in which the handle wafer has been removed leaving the insulating silicon dioxide layer of the device wafer which has been further etched to expose the doped regions within the elemental devices to allow metallisation which forms the lower parallel plate and ohmic contact to the plasma elemental devices.

14. A solid state plasma monolithic microwave integrated circuit according to claim 12 in which the handle wafer has been amorphised to reduce surface charge and has been selectively removed to expose the doped regions within the elemental devices to allow metallisation which forms the lower parallel plate with raised ohmic contact to the plasma elemental devices.

15. A solid state plasma monolithic microwave integrated circuit according to claim 1 in which the wafer is laser cut, cleaved or core drilled to produce individual dice.

16. A solid state plasma monolithic microwave integrated circuit according to claim 15 in which a control device is directly integrated to a radio frequency monolithic microwave integrated circuit die.

17. A solid state plasma monolithic microwave integrated circuit according to claim 16 in which the control device, which can simultaneously bias connected groups of elemental plasma devices to form regions of reflectivity, transparency and absorbency with the parallel plate monolithic microwave integrated circuit, is connected to the pads of the radio frequency monolithic microwave integrated circuit using flip chip and solder bump technologies.

18. A solid state plasma monolithic microwave integrated circuit according to claim 17 in which a radio frequency circuit load is interfaced to the parallel plate monolithic microwave integrated circuit to provide radio frequency ports.

19. A solid state plasma monolithic microwave integrated circuit according to claim 18 in which the plasma radio frequency monolithic microwave integrated circuit, the control chip and the radio frequency printed circuit board are able to be encapsulated within a single surface mount package.

20. A solid state plasma monolithic microwave integrated circuit according to claim 19 and which is for use in radio frequency commutators, high linearity switches, fast beamformers, electronically controllable time delays, tuneable filters and smart antennas.