Via support structure under pad areas for BSI bondability improvement
First Claim
1. A method of forming an integrated chip, comprising:
- forming a first interconnect wire within a first inter-level dielectric (ILD) layer over a substrate;
forming one or more vias on the first interconnect wire and within a second ILD layer separated from the substrate by the first ILD layer;
forming one or more additional vias within the second ILD layer, wherein respective ones of the one or more vias have a larger size than respective ones of the one or more additional vias;
reducing a thickness of the substrate;
etching the substrate to form a bond pad opening extending through the substrate to the first interconnect wire; and
forming a bond pad within the bond pad opening and directly over the one or more vias.
1 Assignment
0 Petitions
Accused Products
Abstract
Some embodiments of the present disclosure relate to a method of forming an integrated chip. The method includes forming a first interconnect wire within a first inter-level dielectric (ILD) layer over a substrate. One or more vias are formed on the first interconnect wire and within a second ILD layer separated from the substrate by the first ILD layer. One or more additional vias are formed within the second ILD layer. Respective ones of the one or more vias have a larger size than respective ones of the one or more additional vias. A thickness of the substrate is reduced, and the substrate is etched to form a bond pad opening extending through the substrate to the first interconnect wire. A bond pad is formed within the bond pad opening and directly over the one or more vias.
28 Citations
20 Claims
-
1. A method of forming an integrated chip, comprising:
-
forming a first interconnect wire within a first inter-level dielectric (ILD) layer over a substrate; forming one or more vias on the first interconnect wire and within a second ILD layer separated from the substrate by the first ILD layer; forming one or more additional vias within the second ILD layer, wherein respective ones of the one or more vias have a larger size than respective ones of the one or more additional vias; reducing a thickness of the substrate; etching the substrate to form a bond pad opening extending through the substrate to the first interconnect wire; and forming a bond pad within the bond pad opening and directly over the one or more vias. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of forming an integrated chip, comprising:
-
forming a first interconnect wire within a first trench in a first inter-level dielectric (ILD) layer located along a front-side of a substrate; forming one or more vias contacting a first side of the first interconnect wire; selectively etching a back-side of the substrate and the first ILD layer to form an opening that is defined by sidewalls of the substrate, sidewalls of the first ILD layer, and a second side of the first interconnect wire opposing the first side; and forming a bond pad within the opening and directly over the one or more vias. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A method of forming an integrated chip, comprising:
-
forming a first interconnect wire and a second interconnect wire within a first inter-level dielectric (ILD) layer over a substrate; forming a first plurality of vias having a substantially same size over the first interconnect wire; forming a second plurality of vias over the second interconnect wire, wherein respective ones of the first plurality of vias have a larger size than respective ones of the second plurality of vias; forming a third interconnect wire over the first plurality of vias; and forming a bond pad directly over the first plurality of vias, wherein the first plurality of vias are spaced apart from one another by a substantially equal distance along a first direction and along a second direction perpendicular to the first direction. - View Dependent Claims (17, 18, 19, 20)
-
Specification