Light emitting diodes (LEDs) with integrated CMOS circuits

• US 10,283,560 B2
• Filed: 02/20/2018
• Issued: 05/07/2019
• Est. Priority Date: 05/18/2016
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Nayak, Deepak, Banna, Srinivasa, Jacob, Ajey P.
• Primary Examiner(s): Roman, Angel
• Application Number:
  US15/899,374
• Publication Number:
  US 20180175107A1
• Time in Patent Office: 441 Days
• Field of Search: None
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0029 comprising only AIIBVI compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

Disclosed is a device which includes first and second major substrate surfaces. The first substrate surface includes an LED with first and second terminals while the second substrate surface includes CMOS circuit components. The CMOS components and LED are coupled by through silicon via (TSV) contacts which extend through the second substrate surface.

Claims

1. A device comprising:

a substrate having first and second major substrate surfaces;

an LED disposed on the first major substrate surface, wherein the LED includes a first LED terminal and a second LED terminal;

complementary metal oxide semiconductor (CMOS) components disposed on the second major substrate surface;

a back-end-of-line (BEOL) dielectric disposed on the second major substrate surface, the BEOL dielectric covers the CMOS components, the BEOL dielectric includes interconnects which are coupled to the CMOS components; and

through silicon via (TSV) contacts, wherein TSV contacts extend through the second major substrate surface, the TSV contacts couple the CMOS components to the first and second LED terminals.

2. The device of claim 1, wherein the LED comprises a multiple quantum well (MQW) LED.

3. The device of claim 2, wherein:

the MQW LED includes an LED body, the LED body serves as the first LED terminal;

an MQW having alternating well and barrier layers; and

a top LED layer disposed on the MQW, the top LED layer serves as the second LED terminal.

4. The device of claim 1, wherein the LED comprises a plurality of color LEDs configured to form a color display.

5. The device of claim 4, wherein the color LEDs comprise:

red MQW LEDs, wherein a red MQW LED comprises a red LED body, a red MQW disposed on the red LED body and a red top LED layer disposed on the red MQW, wherein the red MQW is configured to produce a red bandgap;

green MQW LEDs, wherein a green MQW LED comprises a green LED body, a green MQW disposed on the green LED body and a green top LED layer disposed on the green MQW, wherein the green MQW is configured to produce a green bandgap;

blue MQW LEDs, wherein a blue MQW LED comprises a blue LED body, a blue MQW disposed on the blue LED body and a blue top LED layer disposed on the blue MQW, wherein the blue MQW is configured to produce a blue bandgap; and

wherein the red MQW LEDs, green MQW LEDs and blue MQW LEDs are configured into a plurality of RGB pixels of the color display.

6. The device of claim 5 wherein:

the red MQW comprises at least a red In_xGa_1-xN layer and a red GaN, where x is the atomic percentage of In in the red In_xGa_1-xN layer and is selected to produce the red bandgap;

the green MQW comprises at least a green In_xGa_1-xN layer and a green GaN, where x is the atomic percentage of In in the green In_xGa_1-xN layer and is selected to produce the green bandgap;

the blue MQW comprises at least a blue In_xGa_1-xN layer and a blue GaN, where x is the atomic percentage of In in the blue In_xGa_1-xN layer and is selected to produce the blue bandgap.

7. The device of claim 6, wherein:

x for the blue In_xGa_1-xN layer comprises about 15-20%;

x for the green In_xGa_1-xN layer comprises about 25-30%; and

x for the red In_xGa_1-xN layer comprises about 35-40%.

8. The device of claim 1, wherein the CMOS components comprise low temperature CMOS components.

9. The device of claim 1, wherein the BEOL dielectric comprises a plurality of interlevel dielectric (ILD) layers with interconnects.

10. The device of claim 1, wherein:

the BEOL dielectric comprises a pad layer with external pad connections on the surface of the BEOL dielectric; and

the TSV contacts interconnect the CMOS components to the first and second LED terminals and to the external pad connections.

11. The device of claim 1 comprises a dielectric layer disposed on the first major surface, wherein the dielectric layer covers the LED.

12. A method for forming a device comprising:

providing a substrate having first and second major substrate surfaces;

forming an LED on the first major substrate surface, wherein the LED includes a first LED terminal and a second LED terminal;

forming complementary metal oxide semiconductor (CMOS) components disposed on the second major substrate surface;

forming a back-end-of-line (BEOL) dielectric on the second major substrate surface, the BEOL dielectric covers the CMOS components, the BEOL dielectric includes interconnects which are coupled to the CMOS components; and

forming through silicon via (TSV) contacts, wherein TSV contacts extend through the second major substrate surface, the TSV contacts interconnect the CMOS components on the second major substrate surface to the first and second LED terminals.

13. The method of claim 12 further comprises:

forming a dielectric layer over on the first major substrate surface, wherein the dielectric layer covers the LED; and

bonding a carrier substrate on a top surface of the dielectric layer.

14. The method of claim 13, wherein forming the CMOS components on the second major substrate surface is performed after bonding the carrier substrate to the top surface of the dielectric layer.

15. The method of claim 12 comprises processing the second major substrate surface to reduce a thickness of the substrate prior to forming the CMOS components.

16. The method of claim 12, wherein forming the CMOS components comprises forming low temperature CMOS components.

17. The method of claim 12, wherein forming the LED comprises forming an MQW LED, wherein:

the MQW LED includes an LED body, the LED body serves as the first LED terminal;

an MQW having alternating well and barrier layers; and

a top LED layer disposed on the MQW, the top LED layer serves as the second LED terminal.

18. The device of claim 12, wherein forming the LED comprises:

forming red MQW LEDs, wherein a red MQW LED comprises a red LED body, a red MQW disposed on the red LED body and a red top LED layer disposed on the red MQW, wherein the red MQW is configured to produce a red bandgap;

forming green MQW LEDs, wherein a green MQW LED comprises a green LED body, a green MQW disposed on the green LED body and a green top LED layer disposed on the green MQW, wherein the green MQW is configured to produce a green bandgap;

forming blue MQW LEDs, wherein a blue MQW LED comprises a blue LED body, a blue MQW disposed on the blue LED body and a blue top LED layer disposed on the blue MQW, wherein the blue MQW is configured to produce a blue bandgap; and

wherein the red MQW LEDs, green MQW LEDs and blue MQW LEDs are configured into a plurality of RGB pixels of a color display.

19. The method of claim 18, wherein:

the red MQW comprises at least a red In_xGa_1-xN layer and a red GaN, where x is the atomic percentage of In in the red In_xGa_1-xN layer and is selected to produce the red bandgap;

the green MQW comprises at least a green In_xGa_1-xN layer and a green GaN, where x is the atomic percentage of In in the green In_xGa_1-xN layer and is selected to produce the green bandgap;

the blue MQW comprises at least a blue In_xGa_1-xN layer and a blue GaN, where x is the atomic percentage of In in the blue In_xGa_1-xN layer and is selected to produce the blue bandgap.

20. The method of claim 19, wherein:

x for the blue In_xGa_1-xN layer comprises about 15-20%;

x for the green In_xGa_1-xN layer comprises about 25-30%; and

x for the red In_xGa_1-xN layer comprises about 35-40%.