×

Modulated super junction power MOSFET devices

  • US 10,283,587 B2
  • Filed: 02/06/2018
  • Issued: 05/07/2019
  • Est. Priority Date: 06/23/2014
  • Status: Active Grant
First Claim
Patent Images

1. A super junction power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of first type dopant, said device comprising:

  • a plurality of columns, wherein said plurality of columns comprises;

    a first plurality of columns comprising second type dopant that is different from said first type dopant, said first plurality of columns formed in a region comprising said first type dopant, each column in said first plurality of columns having substantially a same first width; and

    a second plurality of columns comprising said second type dopant, said second plurality of columns formed in said region comprising said first type dopant, each column in said second plurality of columns having substantially a same second width;

    wherein said first width is different from said second width, and wherein said second plurality of columns comprises columns that are surrounded by columns of said first plurality of columns, and wherein each column in said first plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, and wherein each column in said second plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×