Modulated super junction power MOSFET devices
First Claim
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1. A super junction power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of first type dopant, said device comprising:
- a plurality of columns, wherein said plurality of columns comprises;
a first plurality of columns comprising second type dopant that is different from said first type dopant, said first plurality of columns formed in a region comprising said first type dopant, each column in said first plurality of columns having substantially a same first width; and
a second plurality of columns comprising said second type dopant, said second plurality of columns formed in said region comprising said first type dopant, each column in said second plurality of columns having substantially a same second width;
wherein said first width is different from said second width, and wherein said second plurality of columns comprises columns that are surrounded by columns of said first plurality of columns, and wherein each column in said first plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, and wherein each column in said second plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal.
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Abstract
A semiconductor device—e.g., a super junction power MOSFET—includes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are modulated in some manner. For example, the widths (e.g., diameters) of some columns are greater than the widths of other columns.
430 Citations
17 Claims
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1. A super junction power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of first type dopant, said device comprising:
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a plurality of columns, wherein said plurality of columns comprises; a first plurality of columns comprising second type dopant that is different from said first type dopant, said first plurality of columns formed in a region comprising said first type dopant, each column in said first plurality of columns having substantially a same first width; and a second plurality of columns comprising said second type dopant, said second plurality of columns formed in said region comprising said first type dopant, each column in said second plurality of columns having substantially a same second width; wherein said first width is different from said second width, and wherein said second plurality of columns comprises columns that are surrounded by columns of said first plurality of columns, and wherein each column in said first plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, and wherein each column in said second plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a substrate comprising a first type dopant; a super junction structure coupled to said substrate and comprising a plurality of columnar regions, said plurality of columnar regions comprising a first plurality of columnar first regions formed in a third region and a second plurality of columnar second regions formed in said third region, said third region comprising said first type dopant, said columnar first regions and said columnar second regions each comprising second type dopant that is different from said first type dopant, wherein each of said columnar first regions has a first width measured orthogonal to the longitudinal axis of said first region, and wherein each of said columnar second regions has a second width measured orthogonal to the longitudinal axis of said second region, said first width different from said second width; wherein said second plurality of columnar second regions comprises columnar regions that are surrounded by columnar regions of said first plurality of columnar first regions, and wherein each columnar region of said first plurality of columnar first regions is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, and wherein each columnar region of said second plurality of columnar second regions is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising a gate, source, and drain, said semiconductor device comprising:
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a substrate of said first type dopant; and an epitaxial layer coupled to said substrate, said epitaxial layer doped with said first type dopant, said epitaxial layer having formed therein a plurality of columns, wherein said plurality of columns comprises; a first plurality of columns comprising second type dopant that is different from said first type dopant, each column in said first plurality of columns having substantially a same first width; and a second plurality of columns comprising said second type dopant, each column in said second plurality of columns having substantially a same second width; wherein said first width is different from said second width, and wherein said second plurality of columns comprises columns that are surrounded by columns of said first plurality of columns, and wherein each column in said first plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with source metal, and wherein each column in said second plurality of columns is electrically and physically in contact with a respective base region of said second type dopant that is electrically and physically in contact with a respective contact region of said second type dopant that is physically and electrically in contact with said source metal. - View Dependent Claims (14, 15, 16, 17)
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Specification