3D capacitor and method of manufacturing same
First Claim
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1. A method of manufacturing a three-dimensional (3D) capacitor, comprising:
- providing a substrate;
forming a fin structure including one or more fins on the substrate;
implanting the fin structure to form a low-resistance surface on the fin structure;
depositing an insulation material on the substrate and on the fin structure, the insulation material substantially filling a region between each of the one or more fins;
removing a portion of the insulation material from the region between each of the one or more fins such that a portion of each of the one or more fins is exposed;
forming a dielectric layer over each of the one or more fins;
forming a first electrode on a first portion of the fin structure; and
forming a second electrode on a second portion of the fin structure,wherein the first and second portions are different, andwherein the first and second electrodes are isolated one from the other.
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Abstract
A three-dimensional (3D) capacitor includes a semiconductor substrate; a fin structure including one or more fins formed on the semiconductor substrate; an insulator material formed between each of the one or more fins; a dielectric layer formed on a first portion of the fin structure; a first electrode formed on the dielectric layer; spacers formed on sidewalls of the first electrode; and a second electrode formed on a second portion of the fin structure. The first and second portions are different. The second electrode includes a surface that is in direct contact with a surface of the spacers.
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Citations
20 Claims
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1. A method of manufacturing a three-dimensional (3D) capacitor, comprising:
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providing a substrate; forming a fin structure including one or more fins on the substrate; implanting the fin structure to form a low-resistance surface on the fin structure; depositing an insulation material on the substrate and on the fin structure, the insulation material substantially filling a region between each of the one or more fins; removing a portion of the insulation material from the region between each of the one or more fins such that a portion of each of the one or more fins is exposed; forming a dielectric layer over each of the one or more fins; forming a first electrode on a first portion of the fin structure; and forming a second electrode on a second portion of the fin structure, wherein the first and second portions are different, and wherein the first and second electrodes are isolated one from the other. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a three-dimensional (3D) capacitor, comprising:
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providing a substrate; forming a fin structure including one or more fins on the substrate; depositing an insulation material on the substrate and on the fin structure, the insulation material substantially filling a region between each of the one or more fins; planarizing the insulation material; removing a portion of the insulation material such that a portion of each of the one or more fins is exposed; implanting the fin structure to form a low-resistance surface on the fin structure; depositing a dielectric layer over each of the one or more fins and over the insulation material; forming a first electrode over a first portion of the fin structure; and forming a second electrode over a second portion of the fin structure, wherein the first and second portions of the fin structure are different, and wherein the first and second electrodes are isolated one from the other. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a three-dimensional (3D) capacitor, comprising:
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providing a substrate; forming one or more fins on the substrate; depositing an insulation material on the substrate and filling a region between each of the one or more fins; etching back the insulation material such that a portion of each of the one or more fins is exposed; after the etching back, implanting the one or more fins to form a low-resistance surface on the one or more fins; after the implanting, forming a dielectric layer over each of the one or more fins above the insulation material; forming a first electrode on a first subset of the one or more fins; and forming a second electrode on a second subset of the one or more fins, wherein the first and second subsets are different portions of same fins. - View Dependent Claims (17, 18, 19, 20)
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Specification