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Manufacturing semiconductor-based multi-junction photovoltaic devices

  • US 10,283,666 B2
  • Filed: 08/18/2017
  • Issued: 05/07/2019
  • Est. Priority Date: 06/22/2012
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a silicon substrate;

    a first active cell including at least part of the silicon substrate;

    a back-surface field layer located above the first active cell;

    a second active cell located above the back-surface field layer; and

    a tunnel junction comprising a first portion and a second portion, the first portion formed within the silicon substrate, the second portion formed above the silicon substrate, the tunnel junction being located between the first active cell and the back-surface field layer.

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