Laser system and method for processing sapphire

• US 10,286,487 B2
• Filed: 02/28/2014
• Issued: 05/14/2019
• Est. Priority Date: 02/28/2013
• Status: Active Grant

• Current Assignee: IPG Photonics Corporation
• Original Assignee: IPG Photonics Corporation
• Inventors: Kancharla, Vijay, Shiner, William, Maynard, Steven, Sercel, Jeffrey P., Mendes, Marco, Sarrafi, Rouzbeh
• Primary Examiner(s): Evans, Geoffrey S
• Application Number:
  US14/770,565
• Publication Number:
  US 20160001398A1
• Time in Patent Office: 1,901 Days
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/0622 by shaping pulses
• CPC Class Codes: B23K 26/0648 comprising lenses
• CPC Class Codes: B23K 26/0665 by beam condensation on the workpiece, e.g. for focusing
• CPC Class Codes: B23K 26/082 Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
• CPC Class Codes: B23K 26/14 using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor B23K26/12 takes precedence
• CPC Class Codes: B23K 26/364 for making a groove or trench, e.g. for scribing a break initiation groove
• CPC Class Codes: B23K 26/38 by boring or cutting
• CPC Class Codes: B23K 26/382 by boring
• CPC Class Codes: B23K 26/402 involving non-metallic material, e.g. isolators

Abstract

Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter “QCW laser”). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.

Claims

1. A method for laser processing a sapphire substrate, the method comprising:

periodically switching on a power source to pulse a continuous wave single mode (SM) fiber laser, thereby operating the SM fiber laser in a quasi-continuous wave (“

QCW”

) mode so as to emit consecutive pulses of SM laser light at a wavelength ranging between about 1060 nm and about 1070 nm, the pulses of SM laser light each having a pulse width ranging between about 50 microseconds and about 600 microseconds;

focusing the pulses of SM laser light at the sapphire substrate; and

laser processing the sapphire substrate with the pulses of laser light.

2. The method of claim 1 further comprising supplying inert gas in a vicinity of the sapphire substrate.

3. The method of claim 2, wherein the inert gas is selected from the group consisting of argon and helium.

4. The method of claim 1, wherein laser processing the sapphire substrate is selected from the group consisting of cutting, scribing, and drilling.

5. The method of claim 1, wherein laser processing includes cutting with a speed between about 10 and 40 inches per minute, and wherein the sapphire substrate has a thickness between about 0.1 and about 1 mm.

6. The method of claim 1, wherein the laser is an ytterbium fiber laser.

7. The method of claim 1, wherein the laser is operated with a duty cycle ranging between about 1% and about 10%.

8. The method of claim 1 further comprising focusing assist laser light at the sapphire substrate, wherein the assist laser light modifies a property of the sapphire to form absorption centers, and wherein the pulses of laser light from the laser couple into the absorption centers to facilitate the laser processing.

9. The method of claim 8 wherein the assist laser light is generated by a green fiber laser configured to emit assist laser light at a wavelength of about 532 nm.

10. The method of claim 9 wherein the green fiber laser is configured to emit the assist laser light with a pulse duration of 1 ns.

11. The method of claim 8 wherein the assist laser light is directed at the sapphire substrate simultaneously with the pulses of laser light from the laser.

12. A laser processing system for laser processing sapphire substrates, the laser processing system comprising:

a single mode (SM) fiber laser configured to operate in a quasi continuous wave (“

QCW”

) mode to emit consecutive pulses of SM laser light at a wavelength between about 1060 nm and about 1070 nm;

a controller coupled to the fiber laser for periodically switching power to the fiber laser to pulse the fiber laser in the QCW mode such that each pulse has a pulse width ranging between about 50 microseconds and about 600 microseconds and with a duty cycle ranging between about 1% and about 10%;

a focus lens configured to focus the laser light on the sapphire substrate so as to process the sapphire substrate;

a laser head configured to direct the focused laser light to the sapphire substrate and including a nozzle for delivering an inert gas to the sapphire substrate with the laser light; and

a gas delivery system configured to deliver the inert gas into the laser head.

13. The laser processing system of claim 12, wherein the fiber laser includes an ytterbium fiber laser.

14. The laser processing system of claim 12, wherein the inert gas is selected from the group consisting of argon and helium.

15. A multiple-beam laser processing system for processing a sapphire substrate, the multiple-beam laser processing system comprising:

an assist laser for generating an assist laser beam with a wavelength and a pulse duration such that the sapphire substrate is sufficiently absorptive of the assist laser beam to modify a property of the sapphire substrate;

a single mode (SM) quasi continuous wave (QCW) process fiber laser for generating a process laser beam with a wavelength between about 1060 nm and about 1070 nm, wherein the wavelength of the assist laser beam is less than the wavelength of the process laser beam; and

a beam combiner for directing the assist laser beam and the SM process laser beam at a target location on the workpiece such that the assist laser beam modifies a property of the sapphire substrate at the target location forming absorption centers and such that the SM process laser beam is coupled into the absorption centers formed in the sapphire substrate at the target location to complete processing of the sapphire substrate at the target location.

16. The multiple-beam laser processing system of claim 15 further including a focus lens for focusing the assist laser beam and the process laser beam at the target location.

17. The multiple-beam laser processing system of claim 15 wherein the assist laser is a green fiber laser for generating a green assist laser beam with a wavelength of about 532 nm.

18. The multiple-beam laser processing system of claim 15, wherein the QCW fiber laser is a QCW single-mode ytterbium fiber laser.

19. The multiple-beam laser processing system of claim 15 further comprising an assist laser beam delivery system for controlling divergence of the assist laser beam such that the assist laser beam and the process laser beam have the same focal plane.