Nano-structure and method of making the same

• US 10,287,697 B2
• Filed: 02/21/2017
• Issued: 05/14/2019
• Est. Priority Date: 10/21/2010
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Mardilovich, Peter, Wei, Qingqiao, Milonova, Irina Nikolaevna, Fuller, Anthony M.
• Primary Examiner(s): Wittenberg, Stefanie S
• Application Number:
  US15/438,074
• Publication Number:
  US 20170159194A1
• Time in Patent Office: 812 Days
• Field of Search: None
• CPC Class Codes: B81C 1/00031 Regular or irregular arrays of nanoscale structures, e.g. etch mask layer photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002
• CPC Class Codes: B81C 2201/013 Etching
• CPC Class Codes: B81C 2201/0197 Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192
• CPC Class Codes: C25D 1/006 Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
• CPC Class Codes: C25D 11/045 for forming AAO templates
• CPC Class Codes: C25D 11/08 containing inorganic acids
• CPC Class Codes: C25D 11/10 containing organic acids
• CPC Class Codes: C25D 11/12 Anodising more than once, e.g. in different baths
• CPC Class Codes: C25D 11/24 Chemical after-treatment
• CPC Class Codes: C25D 11/26 of refractory metals or alloys based thereon

Abstract

In an example of a method for making a nano-structure, an aluminum layer is partially anodized to form a porous anodic alumina structure. The aluminum layer is positioned on an oxidizable material layer. The porous anodic alumina structure is exposed to partial anisotropic etching to form tracks within the porous anodic alumina structure. A remaining portion of the aluminum layer is further anodized to form paths where the tracks are formed. The oxidizable material layer is anodized to from an oxide, where the oxide grows through the paths formed within the porous anodic alumina structure to form a set of super nano-pillars.

Claims

1. A method for making a nano-structure, comprising:

partially anodizing an aluminum layer in an electrolyte and at a voltage to form a porous anodic alumina structure including a plurality of pores, wherein each of the plurality of pores has a bottom portion that is defined by an alumina barrier layer of the porous anodic alumina structure, the aluminum layer being positioned on an oxidizable material layer;

partially anisotropic etching the porous anodic alumina structure to form tracks in the alumina barrier layer at the bottom portion of each of the plurality of pores within the porous anodic alumina structure;

further anodizing a remaining portion of the aluminum layer in the electrolyte and at the voltage until a current density decreases and reaches a steady state, thereby completing anodization of the aluminum layer and forming open paths where the tracks had been formed; and

anodizing the oxidizable material layer to form an oxide, whereby the oxide grows through the open paths formed within the porous anodic alumina structure to form a set of super nano-pillars.

2. The method as defined in claim 1 wherein during the anodizing of the oxidizable material layer, the oxide grows through the open paths to form multiple discrete sets of super nano-pillars.

3. The method as defined in claim 1, further comprising forming a cap layer on the set of super nano-pillars during the anodizing of the oxidizable material layer.

4. The method as defined in claim 3 wherein prior to forming the cap layer, the method further comprises:

controlling a thickness of the oxidizable material layer; and

controlling a voltage during anodizing of the oxidizable material layer.

5. The method as defined in claim 1, further comprising removing the porous anodic alumina structure.

6. The method as defined in claim 1, further comprising:

estimating a duration for performing complete anodization of the aluminum layer; and

determining a duration for the partial anodization of the aluminum layer based upon the estimated duration for performing the complete anodization of the aluminum layer.

7. The method as defined in claim 1 wherein the partially anisotropic etching of the porous anodic alumina structure is accomplished using about 5 vol. % H₃PO₄ at about 30°

C. for a time ranging from about 5 minutes to about 45 minutes.

8. The method as defined in claim 1 wherein the electrolyte is chosen from H₂SO₄, H₃, PO₄, H₂C₂O₄, H₂CrO₄, and mixtures thereof.

9. The method as defined in claim 1 wherein the anodizing of the oxidizable material layer is accomplished using a second electrolyte selected from the group consisting of H₂SO₄, H₃, PO₄, H₂C₂O₄, H₂CrO₄, and mixtures thereof.

10. The method as defined in claim 1 wherein the tracks are weakened portions in the alumina barrier layer.

11. The method as defined in claim 1 wherein the voltage is 30 V, and the partial anodization is accomplished for about 3 minutes and 45 seconds.