Junction region between two waveguides and associated method of production

• US 10,288,806 B2
• Filed: 12/02/2016
• Issued: 05/14/2019
• Est. Priority Date: 06/30/2016
• Status: Active Grant

• Current Assignee: STMicroelectronics SAS (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SAS (STMicroelectronics NV)
• Inventors: Baudot, Charles
• Primary Examiner(s): Bedtelyon, John
• Application Number:
  US15/367,901
• Publication Number:
  US 20180003895A1
• Time in Patent Office: 893 Days
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 2006/121 Channel; buried or the like
• CPC Class Codes: G02B 2006/12173 Masking
• CPC Class Codes: G02B 2006/12176 Etching
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/125 Bends, branchings or intersections
• CPC Class Codes: G02B 6/136 by etching

Abstract

A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region the includes a bulge region.

Claims

1. A photonic integrated device, comprising:

a semiconductor substrate comprising a first lateral area, a second lateral area, a central area, a first intermediate area that is located between the first lateral area and the central area, and a second intermediate area that is located between the second lateral area and the central area,

a first waveguide comprising a portion in the first lateral area, and

a second waveguide comprising a portion in the second lateral area,

wherein the first and second waveguides are mutually coupled by a junction region comprising a central junction region that is located in the central area, a first intermediate junction region and a second intermediate junction region extending, respectively, into the first and second intermediate areas while gradually widening in order to meet the central junction region so as to form a bulge, and

wherein the first waveguide comprises a first part produced on a second part that is wider than the first part, and

wherein the junction region comprises a portion of said second part that extends from the first lateral area into the first intermediate area and into a part of the central area while gradually narrowing until reaching a width of the central junction region.

2. The device according to claim 1, wherein the second waveguide comprises a third part produced on a fourth part that is wider than the third part thereof and the junction region additionally comprises a portion of said fourth part that extends from the second lateral area into the second intermediate area and into a part of the central area while gradually narrowing until reaching the width of the central junction region.

3. The device according to claim 1, wherein lengths of the first intermediate area and of the second intermediate area are different.

4. The device according to claim 1, wherein a total length of the junction region is less than or equal to thirty-five micrometers.

5. A system comprising a photonic integrated device, wherein the photonic integrated device comprises:

a semiconductor substrate comprising a first lateral area, a second lateral area, a central area, a first intermediate area that is located between the first lateral area and the central area, and a second intermediate area that is located between the second lateral area and the central area,

a first waveguide comprising a portion in the first lateral area, and

a second waveguide comprising a portion in the second lateral area,

wherein the first and second waveguides are mutually coupled by a junction region comprising a central junction region that is located in the central area, a first intermediate junction region and a second intermediate junction region extending, respectively, into the first and second intermediate areas while gradually widening in order to meet the central junction region so as to form a bulge, and

wherein the first waveguide comprises a first part produced on a second part that is wider than the first part, and

wherein the junction region comprises a portion of said second part that extends from the first lateral area into the first intermediate area and into a part of the central area while gradually narrowing until reaching a width of the central junction region.

6. The system according to claim 5, wherein the system is an optical transceiver.

7. The system according to claim 5, wherein the second waveguide comprises a third part produced on a fourth part that is wider than the third part thereof and the junction region additionally comprises a portion of said fourth part that extends from the second lateral area into the second intermediate area and into a part of the central area while gradually narrowing until reaching the width of the central junction region.

8. The system according to claim 5, wherein lengths of the first intermediate area and of the second intermediate area are different.

9. The system according to claim 5, wherein a total length of the junction region is less than or equal to thirty-five micrometers.