Devices and methods for accessing resistive change elements in resistive change element arrays

• US 10,290,327 B2
• Filed: 10/13/2017
• Issued: 05/14/2019
• Est. Priority Date: 10/13/2017
• Status: Active Grant

• Current Assignee: Nantero Incorporated
• Original Assignee: Nantero Incorporated
• Inventors: Luo, Jia
• Primary Examiner(s): Tran, Michael T
• Application Number:
  US15/783,622
• Publication Number:
  US 20190115054A1
• Time in Patent Office: 578 Days
• Field of Search: 365148, 365158
• CPC Class Codes: G11C 11/5614 using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
• CPC Class Codes: G11C 11/5678 using amorphous/crystalline phase transition storage elements
• CPC Class Codes: G11C 11/5685 using storage elements comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0011 comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
• CPC Class Codes: G11C 13/0026 Bit-line or column circuits
• CPC Class Codes: G11C 13/003 Cell access
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 13/0064 Verifying circuits or methods
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 13/0097 Erasing, e.g. resetting, circuits or methods
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2013/0045 Read using current through the cell
• CPC Class Codes: G11C 2013/0054 Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
• CPC Class Codes: G11C 2013/0078 Write using current through the cell
• CPC Class Codes: G11C 2213/77 Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
• CPC Class Codes: G11C 5/06 Arrangements for interconnecting storage elements electrically, e.g. by wiring
• CPC Class Codes: G11C 5/147 Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops G11C5/141 takes precedence

Abstract

Devices and methods for accessing resistive change elements in a resistive change element array to determine resistive states of the resistive change elements are disclosed. According to some aspects of the present disclosure the devices and methods access resistive change elements in a resistive change element array through a variety of operations. According to some aspects of the present disclosure the devices and methods supply an amount of current tailored for a particular operation. According to some aspects of the present disclosure the devices and methods compensate for circuit conditions of a resistive change element array by adjusting an amount of current tailored for a particular operation to compensate for circuit conditions of the resistive change element array.

Claims

1. A device, comprising:

a resistive change element array, wherein said resistive change element array comprises;

a plurality of bit lines;

a plurality of word lines;

a plurality of resistive change elements, wherein each resistive change element has a first terminal and a second terminal, and wherein said first terminal of each resistive change element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive change element is electrically connected to a word line of said plurality of word lines; and

a plurality of resistive reference elements, wherein each resistive reference element has a first terminal and a second terminal, and wherein said first terminal of each resistive reference element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive reference element is electrically connected to a word line of said plurality of word lines;

a circuit configured to sink an amount of current for an operation of at least one resistive change element in said plurality of resistive change elements based on a resistance selected by current flow between said circuit and said plurality of resistive reference elements, wherein said resistance is selected from resistances of resistive reference elements in said plurality of resistive reference elements, and wherein said circuit is electrically connected to said plurality of resistive change elements and said plurality of resistive reference elements; and

a plurality of sense devices, wherein each resistive change element of said plurality of resistive change elements is electrically connected to a sense device of said plurality of sense devices.

2. The device of claim 1, wherein said plurality of resistive reference elements comprises a plurality of low resistive reference elements, a plurality of intermediate resistive reference elements, and a plurality of high resistive reference elements, and wherein said plurality of low resistive reference elements have resistances less than resistances of said plurality of intermediate resistive reference elements and said plurality of intermediate resistive reference elements have resistances less than resistances of said plurality of high resistive reference elements.

3. The device of claim 1, wherein said circuit is further configured to receive at least one control signal and adjust current flow between said circuit and said plurality of resistive reference elements based on said at least one control signal.

4. The device of claim 1, wherein said circuit is further configured to adjust said amount of current for an operation of at least one resistive change element to compensate for circuit conditions of said resistive change element array.

5. The device of claim 1, wherein resistive change elements in said plurality of resistive change elements are selected from the group consisting of two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.

6. The device of claim 1, wherein resistive reference elements in said plurality of resistive reference elements are selected from the group consisting of resistors, two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.

7. A device, comprising:

a resistive change element array, wherein said resistive change element array comprises;

a plurality of bit lines;

a plurality of word lines;

a plurality of resistive change elements, wherein each resistive change element has a first terminal and a second terminal, and wherein said first terminal of each resistive change element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive change element is electrically connected to a word line of said plurality of word lines; and

a plurality of resistive reference elements, wherein each resistive reference element has a first terminal and a second terminal, and wherein said first terminal of each resistive reference element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive reference element is electrically connected to a word line of said plurality of word lines;

a circuit configured to source an amount of current for an operation of at least one resistive change element in said plurality of resistive change elements based on a resistance selected by current flow between said circuit and said plurality of resistive reference elements, wherein said resistance is selected from resistances of resistive reference elements in said plurality of resistive reference elements, and wherein said circuit is electrically connected to said plurality of resistive change elements and said plurality of resistive reference elements; and

a plurality of sense devices, wherein each resistive change element of said plurality of resistive change elements is electrically connected to a sense device of said plurality of sense devices.

8. The device of claim 7, wherein said plurality of resistive reference elements comprises a plurality of low resistive reference elements, a plurality of intermediate resistive reference elements, and a plurality of high resistive reference elements, and wherein said plurality of low resistive reference elements have resistances less than resistances of said plurality of intermediate resistive reference elements and said plurality of intermediate resistive reference elements have resistances less than resistances of said plurality of high resistive reference elements.

9. The device of claim 7, wherein said circuit is further configured to receive at least one control signal and adjust current flow between said circuit and said plurality of resistive reference elements based on said at least one control signal.

10. The device of claim 7, wherein said circuit is further configured to adjust said amount of current for an operation of at least one resistive change element to compensate for circuit conditions of said resistive change element array.

11. The device of claim 7, wherein resistive change elements in said plurality of resistive change elements are selected from the group consisting of two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.

12. The device of claim 7, wherein resistive reference elements in said plurality of resistive reference elements are selected from the group consisting of resistors, two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.

13. A device, comprising:

a resistive change element array, wherein said resistive change element array comprises;

a plurality of bit lines;

a plurality of word lines;

a plurality of resistive change elements, wherein each resistive change element has a first terminal and a second terminal, and wherein said first terminal of each resistive change element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive change element is electrically connected to a word line of said plurality of word lines; and

a plurality of resistive reference elements, wherein each resistive reference element has a first terminal and a second terminal, and wherein said first terminal of each resistive reference element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive reference element is electrically connected to a word line of said plurality of word lines;

a circuit configured to sink an amount of current for an operation of at least one resistive change element in said plurality of resistive change elements based on a resistance selected by current flow between said circuit and said plurality of resistive reference elements, wherein said resistance is selected from a number of different resistances greater than a number of different resistances among resistive reference elements in said plurality of resistive reference elements, and wherein said circuit is electrically connected to said plurality of resistive change elements and said plurality of resistive reference elements; and

a plurality of sense devices, wherein each resistive change element of said plurality of resistive change elements is electrically connected to a sense device of said plurality of sense devices.

14. The device of claim 13, wherein said number of different resistances is three and said number of different resistances among resistive reference elements in said plurality of resistive reference elements is two.

15. The device of claim 13, wherein said plurality of resistive reference elements comprises a plurality of low resistive reference elements and a plurality of high resistive reference elements, and wherein said plurality of low resistive reference elements have resistances less than resistances of said plurality of high resistive reference elements.

16. The device of claim 13, wherein said circuit is further configured to receive at least one control signal and adjust current flow between said circuit and said plurality of resistive reference elements based on said at least one control signal.

17. The device of claim 13, wherein said circuit is further configured to adjust said amount of current for an operation of at least one resistive change element to compensate for circuit conditions of said resistive change element array.

18. The device of claim 13, wherein resistive change elements in said plurality of resistive change elements are selected from the group consisting of two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.

19. The device of claim 13, wherein resistive reference elements in said plurality of resistive reference elements are selected from the group consisting of resistors, two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.

20. A device, comprising:

a resistive change element array, wherein said resistive change element array comprises;

a plurality of bit lines;

a plurality of word lines;

a plurality of resistive change elements, wherein each resistive change element has a first terminal and a second terminal, and wherein said first terminal of each resistive change element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive change element is electrically connected to a word line of said plurality of word lines; and

a plurality of resistive reference elements, wherein each resistive reference element has a first terminal and a second terminal, and wherein said first terminal of each resistive reference element is electrically connected to a bit line of said plurality of bit lines and said second terminal of each resistive reference element is electrically connected to a word line of said plurality of word lines;

a circuit configured to source an amount of current for an operation of at least one resistive change element in said plurality of resistive change elements based on a resistance selected by current flow between said circuit and said plurality of resistive reference elements, wherein said resistance is selected from a number of different resistances greater than a number of different resistances among resistive reference elements in said plurality of resistive reference elements, and wherein said circuit is electrically connected to said plurality of resistive change elements and said plurality of resistive reference elements; and

a plurality of sense devices, wherein each resistive change element of said plurality of resistive change elements is electrically connected to a sense device of said plurality of sense devices.

21. The device of claim 20, wherein said number of different resistances is three and said number of different resistances among resistive reference elements in said plurality of resistive reference elements is two.

22. The device of claim 20, wherein said plurality of resistive reference elements comprises a plurality of low resistive reference elements and a plurality of high resistive reference elements, and wherein said plurality of low resistive reference elements have resistances less than resistances of said plurality of high resistive reference elements.

23. The device of claim 20, wherein said circuit is further configured to receive at least one control signal and adjust current flow between said circuit and said plurality of resistive reference elements based on said at least one control signal.

24. The device of claim 20, wherein said circuit is further configured to adjust said amount of current for an operation of at least one resistive change element to compensate for circuit conditions of said resistive change element array.

25. The device of claim 20, wherein resistive change elements in said plurality of resistive change elements are selected from the group consisting of two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.

26. The device of claim 20, wherein resistive reference elements in said plurality of resistive reference elements are selected from the group consisting of resistors, two-terminal nanotube switching elements, phase change memory elements, metal oxide memory elements, and conductive bridge memory elements.