Image sensor device and method of forming same

• US 10,290,671 B2
• Filed: 09/25/2017
• Issued: 05/14/2019
• Est. Priority Date: 02/24/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Wen-De, Yaung, Dun-Nian, Liu, Jen-Cheng, Chuang, Chun-Chieh, Lin, Jeng-Shyan
• Primary Examiner(s): Everhart, Caridad
• Assistant Examiner(s): Singal, Ankush
• Application Number:
  US15/714,043
• Publication Number:
  US 20180026069A1
• Time in Patent Office: 596 Days
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00

Abstract

An image sensor device includes a first substrate, an interconnect structure, a conductive layer, a conductive via and a second substrate. The first substrate includes a first region including a pixel array and a second region including a circuit. The interconnect structure is over the pixel array or the circuit. The interconnect structure electrically connecting the circuit to the pixel array. The conductive layer is on the interconnect structure. The conductive via passes through the second substrate and at least partially embedded in the conductive layer. The second substrate is over the conductive layer.

Claims

1. An image sensor device, comprising:

a conductive re-routing layer;

a first semiconductor substrate arranged over the conductive re-routing layer, the first semiconductor substrate including a first portion with a via opening therein and a second portion that exhibits an absence of a via opening;

a conductive material arranged in the via opening in the first portion of the first semiconductor substrate;

a conductive layer arranged over the first semiconductor substrate and over the conductive material, wherein the conductive material electrically couples the conductive layer to the conductive re-routing layer;

an interconnect structure arranged over the conductive layer, wherein the interconnect structure includes at least two metal layers separated from each other by a dielectric material; and

a second semiconductor substrate arranged over the interconnect structure, the second semiconductor substrate including a pixel region arranged over the first portion of the first semiconductor substrate and a circuit region arranged over the second portion of the first semiconductor substrate.

2. The image sensor device of claim 1, wherein the conductive material in the via opening is at least partially embedded in the conductive layer.

3. The image sensor device of claim 1, further comprising a first insulating layer between the first semiconductor substrate and the interconnect structure.

4. The image sensor device of claim 3, wherein the conductive layer is partially embedded in the first insulating layer.

5. The image sensor device of claim 3, further comprising a second insulating layer over the first insulating layer.

6. The image sensor device of claim 1, further comprising a terminal on a surface of the conductive re-routing layer, wherein the terminal is electrically connected to the conductive material, and within the pixel region or the circuit region.

7. The image sensor device of claim 1, wherein the conductive layer comprises a portion in the pixel region, and configured as a pad.

8. The image sensor device of claim 1, wherein the conductive layer is a solid layer of conductive material which extends over the pixel region and the circuit region without any through-holes over the pixel region or over the circuit region.

9. The image sensor device of claim 1, further comprising an insulating layer surrounding a sidewall of the conductive material.

20. The image sensor device of claim 1, wherein the at least one of the two metal layers comprises copper.

10. An image sensor device, comprising:

a first substrate including a pixel region and a circuit region;

an interconnect structure arranged over the first substrate, the interconnect structure including plurality of metal layers stacked over one another and extending over the pixel region and the circuit region;

a conductive layer arranged over the interconnect structure, the conductive layer including a solid layer of conductive material which extends over the pixel region and circuit region without any through-holes over the pixel region or over the circuit region;

a second substrate arranged over the conductive layer;

a conductive re-routing layer arranged over the second substrate; and

a conductive via passing through the second substrate electrically coupling the conductive re-routing layer to the conductive layer, the conductive via being arranged over the pixel region.

11. The image sensor device of claim 10, further comprising an insulation layer surrounding a sidewall of the conductive via.

12. The image sensor device of claim 10, wherein the first substrate comprises:

a light incident side, the pixel region or the circuit region being on the light incident side of the first substrate; and

a backside side of the first substrate which is opposite the light incident side.

13. The image sensor device of claim 12, further comprising a filter element on the light incident side of the first substrate.

14. The image sensor device of claim 10, wherein the conductive via has vertical sidewalls and a constant width.

15. The image sensor device of claim 10, wherein the conductive via has tapered sidewalls and a varying width.

16. The image sensor device of claim 10, wherein the conductive re-routing layer includes a first portion over the pixel region and a second portion over the circuit region.

17. An image sensor device, comprising:

a first substrate including a pixel region and a circuit region;

an interconnect structure arranged over the first substrate, the interconnect structure including plurality of metal layers stacked over one another and extending over the pixel region and the circuit region;

a conductive layer arranged over the interconnect structure;

a second substrate arranged over the conductive layer;

a conductive re-routing layer arranged over the second substrate; and

a conductive via passing through the second substrate electrically coupling the conductive re-routing layer to the conductive layer, the conductive via being arranged over the pixel region.

18. The image sensor device of claim 17, wherein the first substrate comprises:

a light incident side corresponding to the pixel region and/or the circuit region, and a backside side of the first substrate which is opposite the light incident side; and

wherein the image sensor device further comprises a filter element on the light incident side of the first substrate.

19. The image sensor device of claim 17, wherein the conductive layer includes a solid layer of conductive material which extends over the pixel region and circuit region without any through-holes over the pixel region or over the circuit region.