AMOLED device and manufacturing method thereof

• US 10,290,688 B2
• Filed: 12/16/2016
• Issued: 05/14/2019
• Est. Priority Date: 09/09/2016
• Status: Expired due to Fees

• Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Original Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Inventors: Han, Baixiang, Wu, Yuanchun
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Liu, Benjamin T
• Application Number:
  US15/328,490
• Publication Number:
  US 20180219054A1
• Time in Patent Office: 879 Days
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 50/00 Organic light-emitting devices integrated devices or assemblies of multiple devices H10K59/00, H10K65/00; organic semiconductor lasers H01S5/36
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/8051 Anodes
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing

Abstract

The present invention provides an AMOLED device and a manufacturing method thereof. The manufacturing method of the AMOLED device according to the present invention adopts an ink jet printing operation to form an anode of the AMOLED device and thus, compared to the prior art operations, saves one mask and reduces one round of photoengraving thereby simplifying the manufacturing operation of the AMOLED device and lowering the manufacturing costs. The AMOLED device according to the present invention comprises an anode that is formed through an ink jet printing operation, so that the manufacturing operation is simplified and the manufacturing cost is reduced.

Claims

1. A manufacturing method of an active matrix organic light-emitting diode (AMOLED) device, comprising the following steps:

Step 1;

providing a thin-film transistor (TFT) substrate, wherein the TFT substrate comprises a backing, a gate electrode arranged on the backing, a gate insulation layer arranged on the gate electrode and the backing, an active layer arranged on the gate insulation layer and located above and corresponding to the gate electrode, an etch stop layer arranged on the active layer and the gate insulation layer, a source electrode and a drain electrode arranged on the etch stop layer, a planarization layer arranged on the source electrode, the drain electrode, and the etch stop layer, and a first via formed in the planarization layer and located above and corresponding to the drain electrode such that the first via exposes at least a portion of the drain electrode;

Step 2;

applying an ink jet printing operation to form an anode in the first via of the planarization layer of the TFT substrate such that the anode is in contact engagement with the drain electrode; and

Step 3;

forming an emissive layer on the anode and forming a cathode on the emissive layer and the planarization layer;

wherein the ink jet printing operation applied in Step 2 uses a printing substance that comprises an aqueous solution containing nanometer metal particles dispersed therein; and

the nanometer metal particles comprise at least one of nanometer silver particle, nanometer gold particle, and nanometer copper particle; and

wherein in Step 1, the planarization layer is further provided with a second via formed therein and the second via is arranged to be located above and corresponding to the active layer so as to expose a portion of the etch stop layer; and

Step 2 further comprises;

applying an ink jet printing operation to form a conductive layer in the second via of the planarization layer of the TFT substrate at the same time of formation of the anode;

the conductive layer being a channel shielding layer or a top gate electrode.

2. The manufacturing method of the AMOLED device as claimed in claim 1, wherein the first via has an inner wall surface that exhibits hydrophilic property, and the portion of the drain electrode that is exposed through the first via has a surface that exhibits hydrophilic property;

and the planarization layer has a portion around a circumference of the first via and having a surface exhibiting hydrophobic property.

3. The manufacturing method of the AMOLED device as claimed in claim 1, wherein the second via has an inner wall surface that exhibits hydrophilic property and the portion of the etch stop layer that is exposed through the second via has a surface that exhibits hydrophilic property;

the planarization layer has a portion around a circumference of the second via and having a surface exhibiting hydrophobic property.

4. AMOLED device as claimed in claim 1, wherein the second via has an inner wall surface that exhibits hydrophilic property and the portion of the etch stop layer that is exposed through the second via has a surface that exhibits hydrophilic property;

the planarization layer has a portion around a circumference of the second via and having a surface exhibiting hydrophobic property.

5. An active matrix organic light-emitting diode (AMOLED) device, comprising:

a backing, a gate electrode arranged on the backing, a gate insulation layer arranged on the gate electrode and the backing, an active layer arranged on the gate insulation layer and located above and corresponding to the gate electrode, an etch stop layer arranged on the active layer and the gate insulation layer, a source electrode and a drain electrode arranged on the etch stop layer, a planarization layer arranged on the source electrode, the drain electrode, and the etch stop layer, a first via formed in the planarization layer and located above and corresponding to the drain electrode, an anode arranged on the first via and in contact engagement with the drain electrode, an emissive layer arranged on the anode, and a cathode arranged on the emissive layer and the planarization layer;

wherein the anode is formed by applying an ink jet printing operation and the anode comprises a material that comprises nanometer metal particles;

wherein the anode is formed through ink jet printing of an aqueous solution containing nanometer metal particles dispersed therein; and

the nanometer metal particles comprise at least one of nanometer silver particle, nanometer gold particle, and nanometer copper particle;

wherein the planarization layer is further provided with a second via, and the second via is arranged to be located above and corresponding to the active layer so as to expose a portion of the etch stop layer;

the second via receives a conductive layer arranged therein and the conductive layer and the anode are formed in the same process with the same material; and

the conductive layer is a channel shielding layer or a top gate electrode.

6. The AMOLED device as claimed in claim 5, wherein the first via has an inner wall surface that exhibits hydrophilic property, and a portion of the drain electrode that is exposed through the first via has a surface that exhibits hydrophilic property;

the planarization layer has a portion around a circumference of the first via and having a surface exhibiting hydrophobic property.

7. An active matrix organic light-emitting diode (AMOLED) device, comprising:

a backing, a gate electrode arranged on the backing, a gate insulation layer arranged on the gate electrode and the backing, an active layer arranged on the gate insulation layer and located above and corresponding to the gate electrode, an etch stop layer arranged on the active layer and the gate insulation layer, a source electrode and a drain electrode arranged on the etch stop layer, a planarization layer arranged on the source electrode, the drain electrode, and the etch stop layer, a first via formed in the planarization layer and located above and corresponding to the drain electrode, an anode arranged on the first via and in contact engagement with the drain electrode, an emissive layer arranged on the anode, and a cathode arranged on the emissive layer and the planarization layer;

wherein the anode is formed by applying an ink jet printing operation and the anode comprises a material that comprises nanometer metal particles;

wherein the anode is formed through ink jet printing of an aqueous solution containing nanometer metal particles dispersed therein; and

the nanometer metal particles comprise at least one of nanometer silver particle, nanometer gold particle, and nanometer copper particle;

wherein the first via has an inner wall surface that exhibits hydrophilic property, and a portion of the drain electrode that is exposed through the first via has a surface that exhibits hydrophilic property;

the planarization layer has a portion around a circumference of the first via and having a surface exhibiting hydrophobic property; and

wherein the planarization layer is further provided with a second via, and the second via is arranged to be located above and corresponding to the active layer so as to expose a portion of the etch stop layer;

the second via receives a conductive layer arranged therein and the conductive layer and the anode are formed in the same process with the same material; and

the conductive layer is a channel shielding layer or a top gate electrode.

8. The AMOLED device as claimed in claim 7, wherein the second via has an inner wall surface that exhibits hydrophilic property and the portion of the etch stop layer that is exposed through the second via has a surface that exhibits hydrophilic property;

the planarization layer has a portion around a circumference of the second via and having a surface exhibiting hydrophobic property.