Semiconductor device
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor film over a substrate;
a source electrode and a drain electrode electrically connected to the oxide semiconductor film;
a gate electrode; and
a gate insulating film between the gate electrode and the oxide semiconductor film,wherein the oxide semiconductor film comprises a first region in which a concentration of carbon is lower than or equal to 1.0×
1019 atoms/cm3, andwherein the oxide semiconductor film comprises a second region in which a concentration of carbon is lower than the concentration of carbon in the first region.
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Accused Products
Abstract
A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
312 Citations
12 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film over a substrate; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate electrode; and a gate insulating film between the gate electrode and the oxide semiconductor film, wherein the oxide semiconductor film comprises a first region in which a concentration of carbon is lower than or equal to 1.0×
1019 atoms/cm3, andwherein the oxide semiconductor film comprises a second region in which a concentration of carbon is lower than the concentration of carbon in the first region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film comprising a channel formation region over the gate insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; wherein the gate insulating film comprises an oxide containing silicon, wherein the oxide semiconductor film comprises a first region having crystallinity in which a concentration of silicon is lower than or equal to 1.0 at. %, wherein the first region is in contact with the gate insulating film, wherein the oxide semiconductor film comprises a second region in which a concentration of silicon is lower than the concentration of silicon in the first region, and wherein the oxide semiconductor film comprises indium, gallium and zinc. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification