Laminating structure of electronic device using transferring element, transferring apparatus for fabricating the electronic device and method for fabricating the electronic device

• US 10,290,785 B2
• Filed: 10/03/2017
• Issued: 05/14/2019
• Est. Priority Date: 10/03/2017
• Status: Active Grant

• Current Assignee: Center For Integrated Smart Sensors Foundation (Center for Integrated Smart Sensors)
• Original Assignee: Center For Integrated Smart Sensors Foundation (Center for Integrated Smart Sensors)
• Inventors: Lee, Keon Jae, Lee, Han Eol, Kim, Do Hyun, Shin, Jung Ho, Hong, Seong Kwang
• Primary Examiner(s): Landau, Matthew C
• Assistant Examiner(s): Yemelyanov, Dmitriy
• Application Number:
  US15/724,016
• Publication Number:
  US 20190103532A1
• Time in Patent Office: 588 Days
• CPC Class Codes: A61B 5/0084 for introduction into the body, e.g. by catheters A61B5/1459 takes precedence
• CPC Class Codes: A61B 5/6868 Brain
• CPC Class Codes: A61N 2005/0612 using probes penetrating tissue; interstitial probes
• CPC Class Codes: A61N 2005/0651 Diodes
• CPC Class Codes: A61N 5/0601 Apparatus for use inside the body
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29298 Fillers
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/753 by means of pressure
• CPC Class Codes: H01L 2224/75651 Belt conveyor
• CPC Class Codes: H01L 2224/75744 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/75753 Means for optical alignment, e.g. sensors
• CPC Class Codes: H01L 2224/83001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/83005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/8316 : Translational movements
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/83205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 2224/83894 : Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2224/95001 : involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 23/5387 : Flexible insulating substrates H01L23/5388 takes precedence
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/93 : Batch processes
• CPC Class Codes: H01L 24/95 : at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15173 : in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/1579 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0095 : Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A laminating structure of an electronic device using a transferring element according to the present disclosure includes a target substrate, a bottom electrode formed on the target substrate, an electronic device which is bonded to the bottom electrode, a top contact formed on the electronic device, a transferring element which is placed between the bottom electrode and the electronic device on the target substrate, and a top electrode connected to the electronic device, wherein the transferring element attached to the carrier substrate comes into contact with the electronic device, and is then transferred onto the target substrate.

Claims

1. A method for fabricating an electronic device using a transferring element comprising:

preparing a mother wafer;

forming an inorganic material-based multilayer thin film layer which makes up an electronic device on the mother wafer;

individually isolating the electronic device formed on the multilayer thin film layer;

attaching a carrier substrate to the electronic device;

removing the mother wafer;

aligning positions of a bottom electrode formed on a target substrate and the electronic device on the carrier substrate;

placing a transferring element between the target substrate and the electronic device, and performing transfer and interconnection;

removing the carrier substrate; and

forming a top electrode connected to the electronic device after the removing of the carrier substrate.

2. The method for fabricating an electronic device using a transferring element of claim 1, wherein the target substrate is a flexible plastic substrate or a polymer substrate.

3. The method for fabricating an electronic device using a transferring element of claim 1,

wherein the attaching of the carrier substrate to the electronic device formed on the multilayer thin film comprises forming a primary protective layer on a side surface of the electronic device to protect the electronic device,

wherein the primary protective layer is an oxide layer or a polymer layer.

4. The method for fabricating an electronic device using a transferring element of claim 3 further comprising:

forming a secondary protective layer on an empty space around the electronic device to prevent a short between the bottom electrode and the top electrode before the forming of the top electrode,

wherein the secondary protective layer is an oxide layer or a polymer layer.

5. The method for fabricating an electronic device using a transferring element of claim 1, wherein the electronic device is a large scale integrated circuit (LSI).

6. The method for fabricating an electronic device using a transferring element of claim 1, wherein the carrier substrate is any one of a group including PDMS, a thermal release tape, a UV release tape, and a water soluble tape.

7. The method for fabricating an electronic device using a transferring element of claim 1, wherein at the transfer and interconnection,

when the transferring element is selectively applied to the target substrate and the electronic device temporarily attached to the carrier substrate is bonded, bonding is only performed on the electronic device placed on an area of the target substrate to which the transferring element is applied.

8. The method for fabricating an electronic device using a transferring element of claim 1, wherein at the transfer and interconnection,

when only part of the electronic device on the carrier substrate is applied to the transferring element, the part of the electronic device is selectively transferred.

9. The method for fabricating an electronic device using a transferring element of claim 1, wherein at the transfer and interconnection,

when the transferring element is entirely applied to the target substrate and the entire electronic device on the carrier substrate is bonded, simultaneous transfer and interconnection of the entire electronic device is achieved.

10. The method for fabricating an electronic device using a transferring element of claim 1, wherein the removing of the mother wafer is performed through etching or laser lift off process.

11. The method for fabricating an electronic device using a transferring element of claim 1,

wherein the transferring element is any one of a group including anisotropic conductive film, Non Conductive Film (NCF), Self Organized Conductive Film (SOCF), Anisotropic Conductive Adhesive (ACA) and solder ball,

wherein the transfer and interconnection uses any one of bonding means including ultrasonic wave, mechanical force, van der Waals force, and heat and pressure.

12. The method for fabricating an electronic device using a transferring element of claim 1,

wherein the individually isolating of the electronic device comprises isolating the electronic device for each chip through masking and etching,

wherein the masking is any one of a group including metal masking, masking using PR, masking using polymer, and soft masking.