Semiconductor device and electronic device

• US 10,290,908 B2
• Filed: 02/02/2015
• Issued: 05/14/2019
• Est. Priority Date: 02/14/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Momo, Junpei, Kuriki, Kazutaka, Godo, Hiromichi, Yamazaki, Shunpei
• Primary Examiner(s): Rhee, Jane J
• Application Number:
  US15/117,349
• Publication Number:
  US 20160351975A1
• Time in Patent Office: 1,562 Days
• CPC Class Codes: A61N 1/378 Electrical supply
• CPC Class Codes: G06F 1/163 Wearable computers, e.g. on a belt
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 29/78651 Silicon transistors H01L29/78606 - H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01M 10/052 Li-accumulators
• CPC Class Codes: H01M 10/0525 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 10/0562 Solid materials
• CPC Class Codes: H01M 10/0585 of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
• CPC Class Codes: H01M 10/425 Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing printed circuits H05K1/00
• CPC Class Codes: H01M 10/46 Accumulators structurally combined with charging apparatus circuits for charging H02J7/00
• CPC Class Codes: H01M 10/613 Cooling or keeping cold
• CPC Class Codes: H01M 10/623 Portable devices, e.g. mobile telephones, cameras or pacemakers
• CPC Class Codes: H01M 2220/30 Batteries in portable systems, e.g. mobile phone, laptop
• CPC Class Codes: H01M 2300/0071 Oxides
• CPC Class Codes: H02J 50/20 : using microwaves or radio frequency waves
• CPC Class Codes: Y02E 60/10 : Energy storage using batteries
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

Claims

1. A semiconductor device comprising:

a first transistor;

a second transistor; and

a secondary battery,

wherein the first transistor, the second transistor, and the secondary battery are provided over a substrate,

wherein a channel region of the first transistor comprises silicon,

wherein a channel region of the second transistor comprises an oxide semiconductor,

wherein the secondary battery comprises a solid electrolyte, and

wherein a source electrode or a drain electrode of the second transistor is electrically connected to a positive electrode current collector layer of the secondary battery.

2. The semiconductor device according to claim 1,

wherein the substrate is flexible.

3. The semiconductor device according to claim 1,

wherein the secondary battery has a function of being wirelessly charged.

4. The semiconductor device according to claim 1,

wherein the secondary battery comprises lithium, and

wherein an insulating film comprising halogen is provided between the secondary battery and the first transistor or between the secondary battery and the second transistor,

wherein the source electrode or the drain electrode of the second transistor is electrically connected to the positive electrode current collector layer of the secondary battery with the insulating film located therebetween.

5. The semiconductor device according to claim 1,

wherein a cooling device is provided over the secondary battery.

6. The semiconductor device according to claim 1,

wherein the secondary battery comprises a portion that is fabricated by a semiconductor manufacturing process.

7. An electronic device comprising a display device and the semiconductor device according to claim 1.

8. A semiconductor device comprising:

a first transistor over a substrate;

a second transistor over the first transistor; and

a secondary battery over the second transistor,

wherein the first transistor, the second transistor, and the secondary battery are overlapped with each other,

wherein a channel region of the first transistor comprises silicon,

wherein a channel region of the second transistor comprises an oxide semiconductor,

wherein the secondary battery comprises a solid electrolyte, and

wherein a source electrode or a drain electrode of the second transistor is electrically connected to a positive electrode current collector layer of the secondary battery.

9. The semiconductor device according to claim 8,

wherein the substrate is flexible.

10. The semiconductor device according to claim 8,

wherein the secondary battery has a function of being wirelessly charged.

11. The semiconductor device according to claim 8,

wherein the secondary battery comprises lithium, and

wherein an insulating film comprising halogen is provided between the secondary battery and the first transistor or between the secondary battery and the second transistor,

wherein the source electrode or the drain electrode of the second transistor is electrically connected to the positive electrode current collector layer of the secondary battery with the insulating film located therebetween.

12. The semiconductor device according to claim 8,

wherein a cooling device is provided over the secondary battery.

13. The semiconductor device according to claim 8,

wherein the secondary battery comprises a portion that is fabricated by a semiconductor manufacturing process.

14. An electronic device comprising a display device and the semiconductor device according to claim 8.