Bottom emitting vertical-cavity surface-emitting lasers
First Claim
1. A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure comprising:
- a first substrate permitting the passage of light therethrough;
an n-doped distributed Bragg reflector (nDBR) disposed on the first substrate and including a first plurality of layers of semiconductor material;
a p-doped distributed Bragg reflector (pDBR) having a second plurality of layers of semiconductor material, the pDBR and the nDBR defining a laser cavity extending vertically therebetween;
one or more active layers disposed in the laser cavity between the nDBR and the pDBR;
at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror disposed over the pDBR; and
a third plurality of layers disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror, the third plurality of layers including a trace layer, an insulating layer, and a thermal conductive layer disposed between the trace layer and the insulating layer, each of the third plurality of layers configured to optically and hermetically seal the laser cavity from an environment external of the bottom-emitting VCSEL structure, and the thermal conducting layer further configured to extract heat from the laser cavity,wherein the VCSEL structure is configured to be flip chipped to a second substrate.
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Accused Products
Abstract
A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure includes a first substrate permitting the passage of light therethrough, an n-doped distributed Bragg reflector (nDBR), a p-doped distributed Bragg reflector (pDBR), one or more active layers, at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror, and a plurality of layers, where the VCSEL structure is configured to be flip chipped to a second substrate. The pDBR and the nDBR define a laser cavity extending vertically therebetween and containing the one or more active layers. The at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror may be disposed over the pDBR. The plurality of layers may be disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity.
14 Citations
20 Claims
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1. A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure comprising:
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a first substrate permitting the passage of light therethrough; an n-doped distributed Bragg reflector (nDBR) disposed on the first substrate and including a first plurality of layers of semiconductor material; a p-doped distributed Bragg reflector (pDBR) having a second plurality of layers of semiconductor material, the pDBR and the nDBR defining a laser cavity extending vertically therebetween; one or more active layers disposed in the laser cavity between the nDBR and the pDBR; at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror disposed over the pDBR; and a third plurality of layers disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror, the third plurality of layers including a trace layer, an insulating layer, and a thermal conductive layer disposed between the trace layer and the insulating layer, each of the third plurality of layers configured to optically and hermetically seal the laser cavity from an environment external of the bottom-emitting VCSEL structure, and the thermal conducting layer further configured to extract heat from the laser cavity, wherein the VCSEL structure is configured to be flip chipped to a second substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure comprising:
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a first substrate permitting the passage of light therethrough; a first mirror portion disposed on the first substrate and including a first plurality of layers of semiconductor material; a second mirror portion including a second plurality of layers of semiconductor material, the first mirror portion and the second mirror portion defining a cavity extending vertically therebetween, and the second mirror portion further including an oxidized layer defining an oxide aperture to contain a current flowing therethrough; and at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror disposed over the oxidized layer; an active region disposed within the cavity; a third plurality of layers disposed over the second mirror portion to optically and hermetically seal the cavity from an environment external of the bottom-emitting VCSEL structure; and a polyimide layer surrounding the second mirror portion and coupling the one or more layers of the third plurality of layers, the first mirror portion, and the second mirror portion, wherein the VCSEL structure is configured to be flip chipped to a second substrate. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure comprising:
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a first substrate permitting the passage of light therethrough; an n-doped distributed Bragg reflector (nDBR) disposed on the first substrate and including a first plurality of layers of semiconductor material; a p-doped distributed Bragg reflector (pDBR) having a second plurality of layers of semiconductor material, the pDBR and the nDBR defining a laser cavity extending vertically therebetween; one or more active layers disposed in the laser cavity between the nDBR and the pDBR; an oxidized layer disposed over the one or more active layers and defining an oxide aperture to contain a current flowing therethrough; a current spreading layer disposed over the pDBR; at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror disposed over the current spreading layer; a third plurality of layers disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity from an environment external of the bottom-emitting VCSEL structure; a plurality of contact rings to electrically couple a trace layer of the third plurality of layers with the pDBR and the nDBR; and a plurality of solder bumps disposed on each of the trace layer and an insulating layer of the third plurality of layers to flip chip and electrically couple the bottom-emitting VCSEL structure to a second substrate. - View Dependent Claims (18, 19, 20)
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Specification