Power amplifier module

• US 10,291,182 B2
• Filed: 02/14/2018
• Issued: 05/14/2019
• Est. Priority Date: 02/17/2017
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Ishihara, Shota, Yamamoto, Yasuhisa
• Primary Examiner(s): Nguyen, Hieu P
• Application Number:
  US15/896,701
• Publication Number:
  US 20180241349A1
• Time in Patent Office: 454 Days
• Field of Search: 330285, 330296, 330289, 330307
• CPC Class Codes: H03F 1/0211 with control of the supply voltage or current
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/30 Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in differential amplifiers H03F3/45479
• CPC Class Codes: H03F 1/56 Modifications of input or output impedances, not otherwise provided for
• CPC Class Codes: H03F 2200/18 the bias of the gate of a FET being controlled by a control signal
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/318 A matching circuit being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/411 the output amplifying stage of an amplifier comprising two power stages
• CPC Class Codes: H03F 2200/444 Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
• CPC Class Codes: H03F 2200/447 the amplifier being protected to temperature influence
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/19 with semiconductor devices only
• CPC Class Codes: H03F 3/21 with semiconductor devices only H03F3/245 takes precedence

Abstract

A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.

Claims

1. A power amplifier module comprising:

a power amplifier circuit comprising;

a bipolar transistor configured to amplify power of a radio frequency signal and to output an amplified signal, and

a first diode element that is thermally coupled with the bipolar transistor; and

a control integrated circuit comprising;

a field-effect transistor, and

a second diode element,

wherein;

a drain terminal of the field-effect transistor is connected to a battery voltage,

a bias signal is input to a gate terminal of the field-effect transistor and is supplied from a source terminal of the field-effect transistor to the bipolar transistor via a first wire,

a cathode of the first diode element is grounded,

an anode of the first diode element is connected to a cathode of the second diode element via a second wire,

an anode of the second diode element is connected to the gate terminal of the field-effect transistor,

the first diode element is a diode-connected bipolar transistor and the second diode element is a diode-connected field-effect transistor,

the cathode of the first diode element is grounded within the power amplifier circuit, and

the power amplifier circuit and the control integrated circuit are manufactured on different substrates.

2. The power amplifier module according to claim 1, wherein the second diode element is thermally coupled with the field-effect transistor.

3. The power amplifier module according to claim 1, wherein the first diode element is a diode and the second diode element is a diode.

4. A power amplifier module comprising:

a power amplifier circuit comprising;

a bipolar transistor configured to amplify power of a radio frequency signal and to output an amplified signal, and

a first diode element that is thermally coupled with the bipolar transistor; and

a control integrated circuit comprising;

a field-effect transistor, and

a second diode element,

wherein;

a drain terminal of the field-effect transistor is connected to a battery voltage,

a bias signal is input to a gate terminal of the field-effect transistor and is supplied from a source terminal of the field-effect transistor to the bipolar transistor via a first wire,

a cathode of the second diode element is grounded,

an anode of the second diode element is connected to a cathode of the first diode element via a second wire, and

an anode of the first diode element is connected to the gate terminal of the field-effect transistor via a third wire

the first diode element is a diode-connected bipolar transistor and the second diode element is a diode-connected field-effect transistor,

the cathode of the second diode element is grounded within the control integrated circuit, and

the power amplifier circuit and the control integrated circuit are manufactured on different substrates.

5. The power amplifier module according to claim 4, wherein the second diode element is thermally coupled with the field-effect transistor.

6. The power amplifier module according to claim 4, wherein the first diode element is a diode and the second diode element is a diode.