Auto-learning log likelihood ratio

• US 10,291,263 B2
• Filed: 07/24/2017
• Issued: 05/14/2019
• Est. Priority Date: 07/28/2016
• Status: Active Grant

• Current Assignee: Ip Gem Group, LLC
• Original Assignee: Ip Gem Group, LLC
• Inventors: Marelli, Alessia, Micheloni, Rino
• Primary Examiner(s): Alphonse, Fritz
• Application Number:
  US15/658,151
• Publication Number:
  US 20180034485A1
• Time in Patent Office: 659 Days
• Field of Search: 714807, 714803, 714805, 714802
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/28 using differential sensing or reference cells, e.g. dummy cells
• CPC Class Codes: G11C 16/3422 Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
• CPC Class Codes: G11C 16/349 Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: H03M 13/458 by updating bit probabilities or hard decisions in an iterative fashion for convergence to a final decoding result

Abstract

A method for identifying log likelihood ratio (LLR) values includes programming codewords into nonvolatile memory devices in response to receiving host-requested write instructions and performing background reads of the programmed codewords in a block at a default threshold voltage, at one or more threshold voltage offset that is less than the default threshold voltage and at one or more threshold voltage offset that is greater than the default threshold voltage. One of the background reads is decoded to identify the stored codeword(s) and a set of LLR values is identified using the stored read results and the identified codeword(s). The process of performing background reads, storing, decoding and identifying is repeated to identify a set of LLR values for each block and further to identify updated sets of LLR values. Host-requested reads are performed and are decoded using LLR values from the updated set of LLR values corresponding to the block that was read.

Claims

1. A method comprising:

programming, at a nonvolatile memory controller, codewords into each of a plurality of nonvolatile memory devices in response to receiving host-requested write instructions at the nonvolatile memory controller;

performing, at the nonvolatile memory controller, background reads of at least one codeword of the programmed codewords in a block of the nonvolatile memory devices at a default threshold voltage, at one or more threshold voltage offset that is less than the default threshold voltage and at one or more threshold voltage offset that is greater than the default threshold voltage;

decoding, at a decoder circuit of the nonvolatile memory controller, at least one of the background reads to identify the at least one codeword;

identifying, at the nonvolatile memory controller, a set of log likelihood ratio (LLR) values using the read results and the identified at least one codeword;

continuing, at the nonvolatile memory controller, the performing background reads, the decoding at least one of the background reads and the identifying to identify a set of LLR values for each block of the nonvolatile memory devices;

further continuing the performing background reads, the decoding at least one of the background reads and the identifying to identify updated sets of LLR values;

performing, at the nonvolatile memory controller, a host-requested read of one of the nonvolatile memory devices; and

decoding, at the nonvolatile memory controller, the results of the host-requested read using LLR values from the updated set of LLR values corresponding to the block that was read in the host-requested read.

2. The method of claim 1 wherein the background reads are only performed on closed blocks.

3. The method of claim 1 wherein the background reads are only performed on closed blocks and are only performed upon the occurrence of one or more of an endurance event, a retention timer event and a read disturb event at a closed block.

4. The method of claim 1 further comprising:

storing the results of the background reads;

identifying an offset producing the lowest total number of errors for each default threshold voltage using the results of the background reads; and

wherein the performing a host-requested read further comprises performing the host-requested read using a threshold voltage shift read instruction at the identified offset producing the lowest total number of errors corresponding to the block of the codeword being read.

5. The method of claim 4 further comprising:

storing each identified offset producing the lowest total number of errors as a background reference positioning (BRP) value in a BRP table, the BRP table including a block index corresponding to each BRP value that indicates the corresponding block number;

continuing the performing background reads, the storing, the decoding at least one of the background reads and the identifying an offset producing the lowest total number of errors to store a BRP value for each block of the nonvolatile memory devices;

further continuing the performing background reads, the storing, the decoding at least one of the background reads and the identifying an offset producing the lowest total number of errors to identify updated offset values;

each time that an updated offset value is identified, storing the updated offset value in the BRP table by overwriting any previously stored BRP value for the corresponding block.

6. The method of claim 1 wherein each block includes a plurality of pages divided into page groups;

wherein the performing background reads further comprises performing background reads of representative pages of a page group at a default threshold voltage, at one or more threshold voltage offset that is less than the default threshold voltage and at one or more threshold voltage offset that is greater than the default threshold voltage;

wherein the identifying a set of LLR values further comprises identifying a set of LLR values for each page group using the read results and the identified at least one codeword; and

wherein the decoding the results of the host-requested reads further comprises decoding the results of the host-requested reads using LLR values from the set of updated LLR values corresponding to the page group of the page that was read.

7. The method of claim 6 further comprising:

generating a LLR table;

storing each of the identified sets of LLR values in the LLR table along with an index identifying the corresponding page group; and

wherein each time that an updated set of LLR values is identified, storing the updated set of LLR values in the LLR table by overwriting the corresponding set of LLR values previously stored in the LLR table.

8. The method of claim 7 wherein the decoding the results of the host-requested reads further comprises decoding the results of the host-requested reads by indexing the LLR table using an index value corresponding to the page group of the page that was read.

9. The method of claim 4 further comprising:

generating a BRP table that includes BRP values and corresponding indexes corresponding to each page group;

continuing the performing background reads, the storing, the decoding at least one of the background reads, the identifying to identify a set of LLR values for each block of the nonvolatile memory devices; and

storing each identified offset producing the lowest total number of errors in the BRP table as the BRP value for the corresponding page group, such that each BRP value in the BRP table is the most recent identified offset producing the lowest total number of errors corresponding to the page group.

10. The method of claim 1 further comprising:

wherein the performing background reads further comprises performing background reads of representative pages of a block at a default threshold voltage within each threshold voltage region required to read the representative pages, at one or more threshold voltage offset that is less than the default threshold voltage within each threshold voltage region required to read the representative pages and at one or more threshold voltage offset that is greater than the default threshold voltage within each threshold voltage region required to read the representative pages;

wherein the identifying a set of LLR values further comprises identifying a set of LLR values corresponding to each threshold voltage region required to read the representative pages using the stored read results and the identified at least one codeword;

wherein the continuing the performing background reads further comprises continuing the performing background reads, the decoding at least one of the background reads and the identifying, to identify a set of LLR values corresponding to each threshold voltage region required to read the representative pages of each block; and

wherein the further continuing the performing background reads further comprises continuing the performing background reads, the decoding at least one of the background reads and the identifying, to identify an updated set of LLR values corresponding to each threshold voltage region required to read the representative pages.

11. A nonvolatile memory controller comprising:

a write circuit coupled to a plurality of nonvolatile memory devices, the write circuit configured to program codewords into each of a plurality of nonvolatile memory devices in response to receiving host-requested write instructions;

a read circuit configured to perform background reads of at least one of the programmed codewords in a block of the nonvolatile memory devices at a default threshold voltage, at one or more threshold voltage offset that is less than the default threshold voltage and at one or more threshold voltage offset that is greater than the default threshold voltage;

a decoder circuit configured to decode at least one of the background reads to identify the at least one codeword;

a log likelihood ratio (LLR) circuit configured to identify a set of LLR values corresponding to the default threshold voltage using the read results and the identified at least one codeword;

wherein the nonvolatile memory controller is configured to continue to perform the background reads, to decode at least one of the background reads, and to identify sets of LLR values, to identify a set of LLR values for each block of the nonvolatile memory devices;

wherein the nonvolatile memory controller is configured to further continue to perform the background reads, to decode at least one of the background reads, and to identify sets of LLR values, to identify updated sets of LLR values;

a read circuit configured to perform a host-requested read of the nonvolatile memory devices; and

a decoder circuit configured to decode the results of the host-requested read using LLR values from the updated set of LLR values corresponding to the block that was read in the host-requested read.

12. The nonvolatile memory controller of claim 11 further comprising:

a background reference positioning (BRP) circuit configured to identify an offset producing the lowest total number of errors for each default threshold voltage using the results of the background reads; and

wherein the performing a host-requested read further comprises performing the host-requested read using a threshold voltage shift read instruction at the identified offset producing the lowest total number of errors corresponding to the block of the codeword being read.

13. The nonvolatile memory controller of claim 12 further comprising:

a BRP table coupled to the BRP circuit and to the read circuit, the BRP table including BRP values and corresponding indexes for each block of the nonvolatile memory devices;

wherein each identified offset producing the lowest total number of errors is stored as a BRP value in the BRP table by overwriting any previously stored BRP value for the corresponding block.

14. The nonvolatile memory controller of claim 11 wherein each block includes a plurality of pages divided into page groups;

wherein the read circuit is configured to perform background reads of representative pages of a page group at one or more default threshold voltages, at one or more threshold voltage offset that is less than each of the default threshold voltages and at one or more threshold voltage offset that is greater than each of the default threshold voltages;

wherein the decoder circuit is configured to decode one of the reads of the exemplary pages of each block to identify at least one codeword in each page group;

wherein the LLR circuit is configured to identify at least one set of updated LLR values for each block using the read results and the identified at least one codeword in each page group; and

wherein the read circuit is configured to perform a host-requested read of the nonvolatile memory devices and the decoder circuit is configured to decode the results of the host-requested read using LLR values from the set of updated LLR values corresponding to the page group of the page that was read in the host-requested read.

15. The nonvolatile memory controller of claim 11 wherein the background reads are only performed on closed blocks.

16. The nonvolatile memory controller of claim 14 wherein the background reads are only performed on closed blocks and are only performed upon the occurrence of one or more of an endurance event, a retention timer event and a read disturb event at a closed block.

17. The nonvolatile memory controller of claim 16 wherein:

the nonvolatile memory controller is configured to determine a number of program and erase cycles for each block of the nonvolatile memory device and wherein the nonvolatile memory controller is configured to determine that an endurance event has occurred each time that the determined number of program and erase cycles of the closed block reaches a threshold number of program and erase cycles;

wherein the nonvolatile memory controller is configured to determine closed block retention time for each closed block of the nonvolatile memory device, and wherein the nonvolatile memory controller is configured to determine that a retention timer event has occurred each time that the closed block retention time reaches a threshold retention time; and

wherein the nonvolatile memory controller is configured to determine a number of reads for each block of the nonvolatile memory device and wherein the nonvolatile memory controller is configured to determine that a read disturb event has occurred each time that the number of reads for the closed block reaches a threshold number of reads.

18. A nonvolatile memory system comprising:

a plurality of nonvolatile memory devices;

a nonvolatile memory controller that is coupled to the nonvolatile memory devices, the nonvolatile memory controller comprising;

a write circuit configured to program the nonvolatile memory devices in response to receiving host-requested write instructions that include user data to store the user data in the nonvolatile memory devices;

a read circuit configured to perform background reads of representative pages of a page group at a default threshold voltage within each threshold voltage region required to read the representative pages, at one or more threshold voltage offset that is less than the default threshold voltage within each threshold voltage region required to read the representative pages and at one or more threshold voltage offset that is greater than the default threshold voltage within each threshold voltage region required to read the representative pages;

a decoder circuit configured to decode the results from some of the background reads of representative pages to identify codewords stored in the representative pages;

a log likelihood ratio (LLR) circuit configured to identify a set of LLR values corresponding to each threshold voltage region required to read the representative pages using the read results and the identified codewords; and

wherein the read circuit is configured to continue to perform the background reads, to decode the results from some of the background reads, and the LLR circuit is configured to continue to identify sets of LLR values, to identify a set of LLR values corresponding to each threshold voltage region required to read the representative pages of each page group;

wherein the read circuit is further configured to continue to perform the background reads and the LLR circuit is further configured to identify updated sets of LLR values; and

wherein the read circuit is configured to perform host-requested reads of the nonvolatile memory devices and the decoder circuit is configured to decode the results of the host-requested reads using LLR values from the updated set of LLR values corresponding to the page group of the page that was read in the host-requested read.

19. The nonvolatile memory system of claim 18 wherein the LLR circuit is configured to store each of the identified sets of LLR values in a LLR table along with an index identifying the corresponding page, and wherein each time that an updated set of LLR values is identified the LLR circuit is configured to store the updated set of LLR values in the LLR table by overwriting the corresponding set of LLR values previously stored in the LLR table.

20. The nonvolatile memory system of claim 19 wherein the decoder circuit is configured to identify LLR values to be used for decoding the host-requested reads by indexing the LLR table using an index value corresponding to the page group of the page being read.