Display device

• US 10,292,235 B2
• Filed: 10/30/2018
• Issued: 05/14/2019
• Est. Priority Date: 06/30/2017
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: InnoLux Corporation
• Inventors: Tsai, Tsung-Han, Lee, Kuan-Feng, Wu, Yu-Hsien, Wu, Yuan-Lin
• Primary Examiner(s): Hines, Anne M
• Application Number:
  US16/174,939
• Publication Number:
  US 20190075633A1
• Time in Patent Office: 196 Days
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 3/32 semiconductive, e.g. using light-emitting diodes [LED]
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/854 : comprising scattering means
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 : Manufacture or treatment
• CPC Class Codes: H10K 59/1213 : the pixel elements being TFTs
• CPC Class Codes: H10K 59/124 : Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/179 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/111 : Flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells

Abstract

A display device is provided. The display device includes a substrate and a light emitting unit disposed on the substrate. The light emitting unit includes an electrode electrically connected to a semiconductor layer. The electrode has a first surface farthest from the semiconductor layer and the semiconductor layer has a second surface adjacent to the electrode. A roughness of the first surface is greater than a roughness of the second surface.

Claims

1. A display device, comprising:

a substrate; and

a light emitting unit disposed on the substrate, wherein the light emitting unit comprises an electrode electrically connected to a semiconductor layer;

wherein the electrode has a first surface farthest from the semiconductor layer, the semiconductor layer has a second surface adjacent to the electrode, and a roughness of the first surface is greater than a roughness of the second surface.

2. The display device according to claim 1, wherein the light emitting unit further comprises an another semiconductor layer having a third surface adjacent to the electrode, and wherein the roughness of the first surface is greater than a roughness of the third surface.

3. The display device according to claim 2, wherein the light emitting unit further comprises an another electrode, and wherein the another electrode has a surface farthest from the another semiconductor layer and contacting at least a portion of a scattering layer.

4. The display device according to claim 3, wherein the scattering layer comprises transparent particles.

5. The display device according to claim 3, wherein the another semiconductor layer is between the semiconductor layer and the another electrode.

6. The display device according to claim 3, wherein the scattering layer covers a sidewall of the another electrode and a sidewall of the another semiconductor layer.

7. The display device according to claim 3, further comprising a conductive layer below and electrically connected to the another electrode.

8. The display device according to claim 7, wherein the scattering layer is disposed on the conductive layer.

9. The display device according to claim 1, further comprising a scattering layer over the light emitting unit, wherein an overlapping region is between the scattering layer and the light emitting unit as viewed from a top-view perspective, and wherein a roughness of a surface of the scattering layer corresponding to the overlapping region greater than a roughness of a surface of the scattering layer without corresponding to the overlapping region.

10. The display device according to claim 9, wherein the scattering layer comprises inorganic materials or organic materials.

11. The display device according to claim 10, wherein the organic materials comprise epoxy.

12. The display device according to claim 10, wherein the scattering layer comprises quantum dots transparent particles.

13. The display device according to claim 1, further comprising an insulating layer disposed on the substrate and adjacent to the light emitting unit.

14. The display device according to claim 13, wherein a thickness of the insulating layer adjacent to a sidewall of the light emitting unit is greater than a thickness of the insulating layer adjacent to a bottom of the light emitting unit.

15. The display device according to claim 13, further comprising a common line disposed on the insulating layer.

16. The display device according to claim 15, further comprising a conductive layer electrically connected between the light emitting unit and the common line.

17. The display device according to claim 1, further comprising a conductive layer in contact with the electrode of the light emitting unit, and wherein the conductive layer has a surface adjacent to the first surface and the surface of the conductive layer is a rough surface.

18. The display device according to claim 1, further comprising a conductive layer in contact with the electrode of the light emitting unit, and wherein the conductive layer has a surface farthest from the first surface and the surface of the conductive layer is a substantially smooth surface.

19. The display device according to claim 1, further comprising a thin film transistor disposed between the substrate and the light emitting unit.

20. The display device according to claim 19, further comprising a conductive layer disposed and electrically connected between the thin film transistor and the light emitting unit.