Electromigration wearout detection circuits

• US 10,295,589 B2
• Filed: 03/15/2016
• Issued: 05/21/2019
• Est. Priority Date: 03/15/2016
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Jenkins, Keith A., Koswatta, Siyuranga O.
• Primary Examiner(s): Patel, Dharti H
• Application Number:
  US15/070,577
• Publication Number:
  US 20170269152A1
• Time in Patent Office: 1,162 Days
• Field of Search: 361 78
• CPC Class Codes: G01R 31/2858 Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
• CPC Class Codes: H02H 1/0007 concerning the detecting means in general G01R or other subclasses of G01; reed switches H01H71/2445

Abstract

Embodiments include methods, and systems of an integrated circuit having electromigration wearout detection circuits. Integrated circuit may include a detection element and a reference element. Detection element is subject to normal operation current. Reference element is not subject to normal operation current. A resistance of detection element is monitored to detect electromigration wearout. The electromigration wearout detection monitoring circuit may be configured to perform: periodically measuring resistance of detection element, calculating resistance change of detection element over a predetermined time period, comparing resistance change of detection element calculated to a predetermined safety threshold, and take mitigation actions when resistance change of detection element exceeds predetermined safety threshold. The mitigation actions may include switching to a redundant circuit of the integrated circuit, shutting down the integrated circuit, and sending a signal to initiate a service call. The predetermined safety threshold may be 1% of resistance change of the detection element.

Claims

1. An electromigration wearout detection circuit comprising:

an integrated circuit having a detection element subject to normal operation current embedded intrinsically in a hot circuit portion of the integrated circuit, and a reference element not subject to normal operation current, switchable via a switching device and a detection enabling signal; and

an electromigration wearout detection monitoring circuit configured to perform;

measuring, periodically, a resistance of the detection element;

calculating a resistance change of the detection element over a predetermined time period;

comparing the resistance change of the detection element calculated to a predetermined safety threshold; and

taking one or more mitigation actions when the resistance change of the detection element exceeds the predetermined safety threshold.

2. The electromigration wearout detection circuit of claim 1, wherein the detection element comprises:

a metal wire;

a via; and

a combination thereof.

3. The electromigration wearout detection circuit of claim 1, wherein the reference element comprises:

a metal wire;

a via;

a resistor; and

a combination thereof.

4. The electromigration wearout detection circuit of claim 1, wherein one or more mitigation actions comprise:

switching to a redundant circuit of the integrated circuit;

shutting down the integrated circuit; and

sending a signal in order to initiate a system service call.

5. The electromigration wearout detection circuit of claim 1, wherein the predetermined safety threshold is 1% of resistance change of the detection element.

6. The electromigration wearout detection circuit of claim 1 further comprising an electromigration wearout detection control circuit configured to provide the detection enabling signal to measure the resistance of the detection element, and the resistance of the reference element.

7. The electromigration wearout detection circuit of claim 1, wherein the electromigration wearout detection monitoring circuit comprises a voltage divider detection monitoring circuit having:

a voltage detection circuit comprising the detection element having a first terminal and a second terminal, and the reference element having a first terminal and a second terminal, wherein the first terminal of the detection element forms a high voltage VH of the voltage detection circuit, the second terminal of the detection element is electrically coupled to the first terminal of the reference element to form an output voltage VEM of the voltage detection circuit, and the second terminal of the reference element forms a low voltage VL of the voltage detection circuit;

a plurality (N+1) of voltage divider resistors, where N being a positive integer, electrically coupled in series, each having a first terminal and a second terminal, wherein the first terminal of a first voltage divider resistor is electrically coupled to the high voltage VH, each of the second terminal of a k-th voltage divider resistor (where k=1, 2, . . . , N, N being a positive integer) is electrically coupled to the first terminal of a next (k+1)-th voltage divider resistor to form an output terminal of the k-th voltage divider resistor, and the second terminal of a last (N+1)-th voltage divider resistor is electrically coupled to the low voltage VL;

a plurality (N) of voltage comparators, each of the N voltage comparators corresponding to each of the first N voltage divider resistors and each of the plurality of voltage comparators having a first input terminal, a second input terminal, and an output terminal, wherein each of a first terminal of a k-th voltage comparator is electrically coupled to the output terminal of the k-th voltage divider resistor, each of a second terminal of the k-th voltage comparator is electrically coupled to the output voltage VEM of the voltage detection circuit; and

a switching device having a gate terminal electrically coupled to a detection enabling signal source, a source terminal electrically coupled to a ground, and a drain terminal electrically coupled to the second terminal of the voltage divider detection monitoring circuit, configured to turn on a detection mode when the gate of the switching device receives a detection enabling signal.

8. The electromigration wearout detection circuit of claim 7, wherein the output of a k-th voltage comparator is 1 when a voltage Vk at the input terminal of the k-th voltage comparator is less than the output voltage VEM of the voltage detection circuit, the output of the k-th voltage comparator is 0 when the voltage Vk at the input terminal of the k-th voltage comparator is greater than the output voltage VEM of the voltage detection circuit, and the resistance of the detection element is calculated by a formula:

9. The electromigration wearout detection circuit of claim 1, wherein the electromigration wearout detection monitoring circuit comprises a voltage controlled oscillator (VCO) electromigration wearout detection monitoring circuit having:

a voltage detection circuit comprising the detection element having a first terminal and a second terminal, and the reference element having a first terminal and a second terminal, wherein the first terminal of the detection element forms a high voltage VH of the voltage detection circuit, the second terminal of the detection element is electrically coupled to the first terminal of the reference element to form an output voltage VEM of the voltage detection circuit, and the second terminal of the reference element forms a low voltage VL of the voltage detection circuit;

a first VCO voltage detection circuit having an input terminal electrically coupled to the high voltage VH of the voltage detection circuit to measure the high voltage VH of the voltage detection circuit;

a second VCO voltage detection circuit having an input terminal electrically coupled to the output voltage VEM of the voltage detection circuit to measure the output voltage VEM of the voltage detection circuit;

a third VCO voltage detection circuit having an input terminal electrically coupled to the low voltage VL of the voltage detection circuit to measure the low voltage VL of the voltage detection circuit; and

a switching device having a gate terminal electrically coupled to a detection enabling signal source, a source terminal electrically coupled to a ground, and a drain terminal electrically coupled to a second terminal of the voltage divider detection monitoring circuit, configured to turn on a detection mode when the gate of the switching device receives a detection enabling signal.

10. The electromigration wearout detection circuit of claim 9, wherein the resistance of the detection element is calculated by a formula:

11. A method of electromigration wearout detection comprising:

embedding a detection element intrinsically in a hot circuit portion of an integrated circuit, and a reference element, wherein the detection element is subject to normal operation current, and the reference element is not subject to normal operation current, switchable via a switching device and a detection enabling signal;

measuring, periodically, a resistance of the detection element using an electromigration wearout detection monitoring circuit;

calculating a resistance change of the detection element over a predetermined time period;

comparing the resistance change of the detection element calculated to a predetermined safety threshold; and

taking one or more mitigation actions when the resistance change of the detection element exceeds the predetermined safety threshold.

12. The method of claim 11, wherein the detection element comprises:

a metal wire;

a via; and

a combination thereof.

13. The method of claim 11, wherein the reference element comprises:

a metal wire;

a via;

a resistor; and

a combination thereof.

14. The method of claim 11, wherein one or more mitigation actions comprise:

switching to a redundant circuit of the integrated circuit;

shutting down the integrated circuit; and

sending a signal in order to initiate a system service call.

15. The method of claim 11, wherein the predetermined safety threshold is 1% of the resistance change of the detection element.

16. A method of electromigration wearout detection comprising:

embedding a detection element extrinsically in close proximity of a hot circuit portion of an integrated circuit, and a reference element, wherein the detection element is subject to normal operation current, and the reference element is not subject to normal operation current, switchable via a switching device and a detection enabling signal;

measuring, periodically, a resistance of the detection element using an electromigration wearout detection monitoring circuit;

calculating a resistance change of the detection element over a predetermined time period;

comparing the resistance change of the detection element calculated to a predetermined safety threshold; and

taking one or more mitigation actions when the resistance change of the detection element exceeds the predetermined safety threshold.

17. The method of claim 16, wherein the detection element comprises:

a metal wire;

a via; and

a combination thereof.

18. The method of claim 16, wherein the reference element comprises:

a metal wire;

a via;

a resistor; and

a combination thereof.

19. The method of claim 16, wherein one or more mitigation actions comprise:

switching to a redundant circuit of the integrated circuit;

shutting down the integrated circuit; and

sending a signal in order to initiate a system service call.

20. The method of claim 16, wherein the predetermined safety threshold is 1% of the resistance change of the detection element.