Integrated photonics including germanium

• US 10,295,745 B2
• Filed: 01/08/2018
• Issued: 05/21/2019
• Est. Priority Date: 01/05/2015
• Status: Active Grant

• Current Assignee: The Research Foundation for The State University of New York (State University of New York)
• Original Assignee: The Research Foundation for The State University of New York (State University of New York)
• Inventors: Coolbaugh, Douglas, Adam, Thomas, Leake, Gerald L.
• Primary Examiner(s): Diaz, Jose R
• Application Number:
  US15/864,651
• Publication Number:
  US 20190025513A1
• Time in Patent Office: 498 Days
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/121 Channel; buried or the like
• CPC Class Codes: G02B 2006/12104 Mirror; Reflectors or the like
• CPC Class Codes: G02B 2006/12123 Diode
• CPC Class Codes: G02B 2006/12169 Annealing
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/1347 using ion implantation ion implantation in glass C03C23/0055; ion implantation in general C23C
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 31/022408 : for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0232 : Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/02327 : the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/028 : including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/105 : the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/1808 : including only Ge
• CPC Class Codes: Y02E 10/52 : PV systems with concentrators
• CPC Class Codes: Y02E 10/547 : Monocrystalline silicon PV cells

Abstract

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

Claims

1. A photonic structure comprising:

dielectric material formed over silicon;

a trench formed in the dielectric material extending to the silicon;

a germanium formation formed in the trench;

a top doping region formed in an area of the germanium formation so that the top doping region is spaced from the trench by a spacing distance equal to or greater than a threshold distance;

a top contact formed on the top doping region, wherein the top contact is formed of a semiconductor compatible metallization material that is reflective to wavelengths in the range of from about 900 nm to about 1600 nm.

2. The photonic structure of claim 1, wherein an entire perimeter of the top doping region is spaced from the trench by a spacing distance equal to or greater than a threshold distance.

3. The photonic structure of claim 1, wherein the threshold distance is in the range of 200 nm to 1000 nm.

4. The photonic structure of claim 1, wherein the threshold distance is 750 nm.

5. The photonic structure of claim 1, wherein the top contact formed on the top doping region is formed in an area of the top doping region so that an entire perimeter of the contact is spaced from a perimeter of the top doping region by a spacing distance that is equal to or greater than a threshold distance.

6. The photonic structure of claim 1, further comprising a top contact formed on the top doping region, a bottom doping region formed in an area of the silicon;

and a bottom contact formed on the bottom doping region.

7. The photonic structure of claim 1, wherein the dielectric material is disposed on a horizontally extending surface of the silicon, the horizontally extending surface of the silicon being at a first elevation, and wherein the germanium formation has a bottom elevation in common with the first elevation.

8. A photonic structure comprising:

silicon having a doping region;

a germanium formation adapted to receive light transmitted by the silicon;

an oppositely doped doping region formed on the germanium formation;

a silicide formation formed on the doping region of the silicon;

a conductive material formation formed on the silicide formation; and

a conductive material formation formed on the germanium formation.

9. The photonic structure of claim 8, wherein the conductive material formation formed on the germanium formation is a germanide-free (refractory) conductive material formation.

10. The photonic structure of claim 8, wherein the conductive material formation formed on the germanium formation is a semiconductor compatible metallization material that is reflective to wavelengths in the range of from about 900 nm to about 1600 nm.

11. The photonic structure of claim 8, wherein the silicide formation formed on the doping region of the silicon is formed of material selected from the group consisting of nickel silicide and nickel platinum silicide.

12. The photonic structure of claim 8, wherein the doping region is disposed below a bottom elevation of the germanium formation and wherein the oppositely doped doping region is formed at a top elevation of the germanium.

13. The photonic structure of claim 8, wherein the oppositely doped doping region is spaced from the silicon.

14. The photonic structure of claim 8, wherein the oppositely doped doping region is spaced from the silicon and spaced from a trench in which the germanium formation is disposed.

15. A photonic structure comprising:

dielectric material formed on silicon;

a trench defined in the dielectric material;

a germanium formation disposed within the trench and formed on the silicon;

a top doping region and a top contact; and

a bottom doping region; and

a bottom contact, wherein the dielectric material is disposed on a horizontally extending surface of the silicon, the horizontally extending surface of the silicon being at a first elevation, and wherein the germanium formation has a bottom elevation in common with the first elevation.

16. The photonic structure of claim 15, wherein the photonic structure includes a silicide interface formed between the bottom doping region and the bottom contact.

17. The photonic structure of claim 15, wherein the bottom doping region is formed on the silicon.

18. The photonic structure of claim 15, wherein the bottom doping region is formed at a bottom of the germanium formation.

19. The photonic structure of claim 15, wherein the top doping region is formed at the top of the germanium formation, wherein the bottom doping region is formed on the silicon, wherein the top contact is in contact with the top doping region, and wherein the photonic structure includes a silicide interface between the bottom doping region and the bottom contact.

20. The photonic structure of claim 15, wherein the top doping region is formed at a top of the germanium formation, wherein the bottom doping region is formed at a bottom of the germanium formation, wherein the top contact is in contact with the top doping region, and wherein the photonic structure includes a silicide interface between the bottom doping region and the bottom contact.