Methods of etching films comprising transition metals
First Claim
1. A method of etching a substrate, the method comprising:
- activating a substrate surface comprising a transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to a halide transfer agent to provide an activated substrate surface; and
exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent,wherein the Lewis base or pi acid comprises one or more of 1,2-bis(difluorophosphino)ethane or a compound having the structure;
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Abstract
Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.
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Citations
18 Claims
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1. A method of etching a substrate, the method comprising:
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activating a substrate surface comprising a transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent, wherein the Lewis base or pi acid comprises one or more of 1,2-bis(difluorophosphino)ethane or a compound having the structure; - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of etching a substrate, the method comprising:
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activating a substrate surface comprising a transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, or an oxidizing environment to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent, wherein the Lewis base or pi acid comprises one or more of 1,2-bis(difluorophosphino)ethane or a compound having the structure; - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification