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Bidirectional power MOSFET structure with a cathode short structure

  • US 10,297,684 B2
  • Filed: 09/29/2017
  • Issued: 05/21/2019
  • Est. Priority Date: 09/29/2017
  • Status: Active Grant
First Claim
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1. A metal oxide silicon field effect transistor (MOSFET) device comprising:

  • a semiconductor substrate (101) having first and second opposing surfaces (102, 103);

    a first region (118) in the semiconductor substrate adjacent to the first surface (102), the first surface adjacent to a drain contact (104);

    a second region (113) in the semiconductor substrate adjacent to the second surface (103), the second surface adjacent to a source contact (105), the second region including a source-located cathode short region (116) the source-located cathode short region (116) being isolated from an insulated gate (117), the source-located cathode short region being of a same conductivity type as the semiconductor substrate;

    a doped region (114) of a different conductivity type as the semiconductor substrate;

    a third region (112) in the semiconductor substrate between the first region and the second region, the third region adjacent to a body contact (107); and

    an insulated gate (117) adjacent to at least the first region and the third region.

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