Light emitting diode and method of manufacturing the same
First Claim
1. A light emitting diode, comprising:
- a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having exposed portions separated from one another and the second conductive type semiconductor layer and the active layer forming mesa structures;
electrodes formed over the mesa structures;
a first insulation layer formed over the electrodes and the mesa structures and including openings exposing portions of the electrodes; and
a second insulation layer formed over the first insulation layer and including openings exposing portions of the first insulation layer and the electrodes,wherein the first insulation layer includes a distributed Bragg reflector (DBR),wherein the light emitting diode further comprises a first pad formed over the second insulation layer and electrically connected to a current spreading layer, and a second pad formed over the second insulation layer and electrically connected to the electrodes.
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Accused Products
Abstract
The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.
16 Citations
19 Claims
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1. A light emitting diode, comprising:
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a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having exposed portions separated from one another and the second conductive type semiconductor layer and the active layer forming mesa structures; electrodes formed over the mesa structures; a first insulation layer formed over the electrodes and the mesa structures and including openings exposing portions of the electrodes; and a second insulation layer formed over the first insulation layer and including openings exposing portions of the first insulation layer and the electrodes, wherein the first insulation layer includes a distributed Bragg reflector (DBR), wherein the light emitting diode further comprises a first pad formed over the second insulation layer and electrically connected to a current spreading layer, and a second pad formed over the second insulation layer and electrically connected to the electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting diode, comprising:
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a substrate; a first conductive type semiconductor layer formed over the substrate; mesa structures formed over the first conductive type semiconductor layer, each mesa structure including an active layer and a second conductive type semiconductor layer; electrodes formed over the mesa structures; a first insulation layer formed over the mesa structures and including openings exposing portions of the electrodes; and a second insulation layer formed over the first insulation layer and including openings exposing portions of the first insulation layer and the electrodes, wherein the openings of the second insulation layer have a greater size than those of the openings of the first insulation layer, wherein the light emitting diode further comprises a first pad formed over the second insulation layer and electrically connected to a current spreading layer, and a second pad formed over the second insulation layer and electrically connected to the electrodes. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification