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Light emitting diode and method of manufacturing the same

  • US 10,297,720 B2
  • Filed: 10/22/2015
  • Issued: 05/21/2019
  • Est. Priority Date: 09/16/2011
  • Status: Active Grant
First Claim
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1. A light emitting diode, comprising:

  • a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having exposed portions separated from one another and the second conductive type semiconductor layer and the active layer forming mesa structures;

    electrodes formed over the mesa structures;

    a first insulation layer formed over the electrodes and the mesa structures and including openings exposing portions of the electrodes; and

    a second insulation layer formed over the first insulation layer and including openings exposing portions of the first insulation layer and the electrodes,wherein the first insulation layer includes a distributed Bragg reflector (DBR),wherein the light emitting diode further comprises a first pad formed over the second insulation layer and electrically connected to a current spreading layer, and a second pad formed over the second insulation layer and electrically connected to the electrodes.

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