Integrated microelectromechanical system devices and methods for making the same

• US 10,298,193 B2
• Filed: 10/13/2015
• Issued: 05/21/2019
• Est. Priority Date: 08/19/2013
• Status: Active Grant

• Current Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Inventors: Rogers, John E.
• Primary Examiner(s): Vo, Peter Dungba
• Assistant Examiner(s): Parvez, Azm A
• Application Number:
  US14/882,161
• Publication Number:
  US 20160036406A1
• Time in Patent Office: 1,316 Days
• Field of Search: 29600, 295921
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: H03H 2007/006 MEMS
• CPC Class Codes: H03H 3/0072 of microelectro-mechanical resonators or networks micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C
• CPC Class Codes: H03H 3/0073 Integration with other electronic structures
• CPC Class Codes: H03H 7/0115 comprising only inductors and capacitors H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence
• CPC Class Codes: H03H 9/462 Microelectro-mechanical filters
• CPC Class Codes: H03H 9/465 in combination with other electronic elements
• CPC Class Codes: H03H 9/505 for microelectro-mechanical filters
• CPC Class Codes: H03H 9/525 for microelectro-mechanical filters
• CPC Class Codes: Y10T 29/49016 Antenna or wave energy "plumbing" making

Abstract

Integrated Microelectromechanical System (“MEMS”) devices and methods for making the same. The integrated MEMS device comprises a substrate (200) with first electronic circuitry (206) formed thereon, as well as a MEMS filter device (100). The MEMS filter device has a transition portion (118) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure (120) in which an elongate center conductor (122) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements (102/110) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.

Claims

1. A method for making an integrated Microelectromechanical Systems (“

MEMS”

) device, comprising;

forming first electronic circuitry on a major surface of a substrate;

forming a MEMS filter structure on the major surface of the substrate;

removing at least one first resist layer from the MEMS filter structure to form (a) a MEMS filter device suspended over the major surface of the substrate exclusively by a transition portion electrically connecting the MEMS filter device to the first electronic circuitry, and (b) a gas gap between the MEMS filter device and the major surface of the substrate; and

removing at least one second resist layer from the MEMS filter structure such that the transition portion is defined by a three dimensional hollow ground structure in which an elongate center conductor is suspended and enclosed except for at one or more points of connection between the center conductor and the MEMS filter device;

wherein at least a portion of the MEMS filter structure resides external to the three dimensional hollow ground structure of the transition portion, and the three dimensional hollow ground structure comprises at least one elongate linear portion extending between the first electronic circuitry and the MEMS filter.

2. The method according to claim 1, further comprising forming second electronic circuitry on the substrate so as to reside between the substrate and the MEMS filter device, wherein a gas gap exists between the second electronic circuitry and the MEMS filter device.

3. The method according to claim 2, wherein the second electronic circuitry is formed using a first conductive material having a first melting point, and the MEMS filter device is formed using a second conductive material having a second melting point that is different from the first melting point by no more than 100°

C.

4. The method according to claim 1, further comprising connecting a dielectric strap between two opposing sidewalls of the transition portion whereby the elongate center conductor can be suspended within the three dimensional hollow ground structure.

5. The method according to claim 1, further comprising providing a gas gap between the elongate center conductor and the three dimensional hollow ground structure.

6. The method according to claim 1, further comprising electrically isolating at least two adjacent electronic elements of an RF MEMS filter device from each other using two spaced apart sidewalls of the ground structure of the transition portion.

7. The method according to claim 1, further comprising electrically isolating at least two adjacent electronic elements of an RF MEMS filter device from each other using a common sidewall of the ground structure of the transition portion.

8. A method for making an integrated Microelectromechanical Systems (“

MEMS”

) device, comprising;

forming first electronic circuitry on a major surface of a substrate;

forming a MEMS filter structure on the major surface of the substrate;

removing at least one first resist layer from the MEMS filter structure to form (a) a MEMS filter device suspended over the major surface of the substrate exclusively by a transition portion electrically connecting the MEMS filter device to the first electronic circuitry, and (b) a gas gap between the MEMS filter device and the major surface of the substrate;

removing at least one second resist layer from the MEMS filter structure such that the transition portion is defined by a three dimensional hollow ground structure in which an elongate center conductor is suspended; and

electrically isolating at least two adjacent electronic elements of an RF MEMS filter device from each other using a common sidewall of the ground structure of the transition portion;

wherein the common sidewall has a thickness that is greater than at least one other second adjoining sidewall of the ground structure.