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High performance radio frequency switch

  • US 10,298,222 B2
  • Filed: 12/15/2017
  • Issued: 05/21/2019
  • Est. Priority Date: 06/16/2015
  • Status: Active Grant
First Claim
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1. A Unit high-electron-mobility transistor (hereinafter “

  • HEMT”

    ) cell, comprising;

    a gallium nitride (hereinafter “

    GaN”

    ) layer;

    a two-dimensional electron gas (hereinafter “

    2DEG”

    ) layer disposed on the GaN layer;

    a gate dielectric layer disposed on the 2DEG layer;

    a GaN HEMT having a gate disposed on the gate dielectric layer, a drain adjacent to one side of the gate and a source adjacent to an opposing side of the gate, the GaN HEMT disposed on and including the GaN layer, and the GaN HEMT having its gate coupled to one terminal of a 2DEG gate bias resistor;

    a HEMT cell gate coupled to another terminal of the 2DEG gate bias resistor;

    a HEMT cell drain coupled to one terminal of a 2DEG linearity resistor and to the drain of the GaN HEMT; and

    a HEMT cell source coupled to another terminal of the 2DEG linearity resistor and to the source of the GaN HEMT.

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