Apparatus and methods for predicting wafer-level defect printability
First Claim
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1. A method of qualifying a photolithographic reticle, the method comprising:
- using a reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle;
recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle;
applying a lithography model to the reticle near field for the test reticle to simulate a plurality of test wafer images; and
analyzing the simulated test wafer images to determine whether the test reticle will likely result in an unstable or defective wafer.
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Abstract
Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field for each of the pattern areas of the test reticle is recovered based on the acquired images from each pattern area of the test reticle. A lithography model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.
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Citations
22 Claims
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1. A method of qualifying a photolithographic reticle, the method comprising:
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using a reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle; recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle; applying a lithography model to the reticle near field for the test reticle to simulate a plurality of test wafer images; and analyzing the simulated test wafer images to determine whether the test reticle will likely result in an unstable or defective wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An inspection system for qualifying a photolithographic reticle, the system comprising:
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a light source for generating an incident beam; illumination optics for directing the incident beam onto a reticle; collection optics for directing an output beam from each pattern area of the reticle to at least one sensor; at least one sensor for detecting the output beam and generating an image or signal based on the output beam; and a controller that is configured to perform the following operations; causing an acquiring of a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle; recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle; applying a lithography model to the reticle near field for the test reticle to simulate a plurality of test wafer images; and analyzing the simulated test wafer images to determine whether the test reticle will likely result in an unstable or defective wafer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification