Ale smoothness: in and outside semiconductor industry
First Claim
Patent Images
1. A method of etching and smoothening a substrate surface, the method comprising:
- exposing a substrate surface comprising a material selected from the group consisting of amorphous carbon, aluminum gallium nitride, gallium nitride, tungsten and cobalt to a reactant in a process chamber and igniting a first plasma to modify a layer of the surface;
purging the process chamber; and
exposing the modified layer to an inert gas and igniting a second plasma at a bias power and for a duration sufficient to remove the modified layer without sputtering,wherein the substrate surface after removing the modified layer is smoother than the substrate surface before exposing the substrate surface to the reactant.
0 Assignments
0 Petitions
Accused Products
Abstract
Methods of etching and smoothening films by exposing to a halogen-containing plasma and an inert plasma within a bias window in cycles are provided. Methods are suitable for etching and smoothening films of various materials in the semiconductor industry and are also applicable to applications in optics and other industries.
79 Citations
20 Claims
-
1. A method of etching and smoothening a substrate surface, the method comprising:
-
exposing a substrate surface comprising a material selected from the group consisting of amorphous carbon, aluminum gallium nitride, gallium nitride, tungsten and cobalt to a reactant in a process chamber and igniting a first plasma to modify a layer of the surface; purging the process chamber; and exposing the modified layer to an inert gas and igniting a second plasma at a bias power and for a duration sufficient to remove the modified layer without sputtering, wherein the substrate surface after removing the modified layer is smoother than the substrate surface before exposing the substrate surface to the reactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification