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Method for manufacturing semiconductor device

  • US 10,304,696 B2
  • Filed: 04/20/2017
  • Issued: 05/28/2019
  • Est. Priority Date: 02/26/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating layer over the gate electrode;

    an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer containing indium, gallium, and zinc;

    a first electrode over the oxide semiconductor layer, the first electrode comprising a layer containing copper;

    a second electrode over the oxide semiconductor layer, the second electrode comprising a layer containing copper;

    a first metal oxide region in direct contact with a top surface and a side surface of the first electrode, the first metal oxide region containing copper;

    a second metal oxide region in direct contact with a top surface and a side surface of the second electrode, the second metal oxide region containing copper;

    an insulating layer over the first metal oxide region and the second metal oxide region, and in direct contact with the oxide semiconductor layer, the insulating layer containing silicon and oxygen; and

    a pixel electrode over the insulating layer,wherein the pixel electrode is in direct contact with the first electrode through an opening provided in the first metal oxide region and the insulating layer.

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