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Semiconductor device having an oxide film on an oxide semiconductor film

  • US 10,304,859 B2
  • Filed: 04/08/2014
  • Issued: 05/28/2019
  • Est. Priority Date: 04/12/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating film over a substrate;

    a second insulating film over the first insulating film;

    an oxide semiconductor film over and in contact with the second insulating film, the oxide semiconductor film including a channel region, wherein the oxide semiconductor film comprises In, M and Zn where M is an element selected from Ga, Y, Zr, La, Ce and Nd;

    an oxide film over and in contact with the oxide semiconductor film, wherein the oxide film is non-single crystalline and comprises In, M and Zn where M is an element selected from Ga, Y, Zr, La, Ce and Nd;

    a pair of conductive films over and in contact with the oxide film, the pair of conductive films including copper, aluminum, gold, silver, or molybdenum; and

    a third insulating film over the pair of conductive films,wherein the third insulating film is in contact with an upper surface of the oxide film at least in a region between the pair of conductive films,wherein the oxide film includes a plurality of crystal parts and has c-axis alignment in the plurality of crystal parts,wherein the pair of conductive films is in contact with a top surface of the first insulating film,wherein an atomic ratio of M with respect to In in the oxide film is larger than an atomic ratio of M with respect to In in the oxide semiconductor film, andwherein, in an atomic ratio of the oxide film, M is larger than In, and Zn is larger than M.

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