Semiconductor device and manufacturing method thereof
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode over a substrate;
forming a first insulating film comprising silicon nitride over the gate electrode;
forming a second insulating film comprising silicon and oxygen over the first insulating film;
forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region;
forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched; and
forming a third insulating film over the oxide semiconductor film, the source electrode and the drain electrode, the third insulating film comprising silicon oxide and being in contact with at least a portion of the oxide semiconductor film,wherein each of the source electrode and the drain electrode comprises a nitride of a metal selected from the group consisting of Al, W, Mo, Ta, and Ti, andwherein the oxide semiconductor film comprises gallium, zinc and indium.
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Citations
10 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a first insulating film comprising silicon nitride over the gate electrode; forming a second insulating film comprising silicon and oxygen over the first insulating film; forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched; and forming a third insulating film over the oxide semiconductor film, the source electrode and the drain electrode, the third insulating film comprising silicon oxide and being in contact with at least a portion of the oxide semiconductor film, wherein each of the source electrode and the drain electrode comprises a nitride of a metal selected from the group consisting of Al, W, Mo, Ta, and Ti, and wherein the oxide semiconductor film comprises gallium, zinc and indium. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a first insulating film comprising silicon oxide over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched; and forming a second insulating film over the oxide semiconductor film, the source electrode and the drain electrode, wherein the second insulating film is in contact with a surface of the oxide semiconductor film, wherein each of the source electrode and the drain electrode comprises a nitride of a metal selected from the group consisting of Al, W, Mo, Ta, and Ti, and wherein the oxide semiconductor film comprises gallium, zinc and indium. - View Dependent Claims (7, 8, 9, 10)
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Specification