MEMS gap control structures
First Claim
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1. A method comprising:
- forming a cavity in a first side of a first silicon wafer;
forming an oxide layer on the first side and in the cavity;
bonding the first side of the first silicon wafer to a first side of a second silicon wafer;
forming a gap control structure from a second side of the second silicon wafer, wherein the gap control structure and the second silicon wafer are a single continuous component;
forming a MEMS (micro-electro-mechanical systems) structure in the second silicon wafer; and
eutecticly bonding a standoff formed from the second side of the second silicon wafer to the third silicon wafer, whereinthe gap control structure is distinct from the standoff eutecticly bonding the second silicon wafer to the third silicon wafer,the eutectic bonding includes pressing the second silicon wafer to a structure formed on a third silicon wafer, andthe gap control structure remains in contact with the structure on the third silicon wafer after the eutectic bonding.
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Abstract
Provided herein is a method including forming a cavity in a first side of a first silicon wafer. An oxide layer is formed on the first side and in the cavity. The first side of the first silicon wafer is bonded to a first side of a second silicon wafer, and a gap control structure is deposited on a second side of the second silicon wafer. A MEMS structure is formed in the second silicon wafer. The second side of the second silicon wafer is eutecticly bonded to the third silicon wafer, and the eutectic bonding includes pressing the second silicon wafer to the third silicon wafer.
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Citations
15 Claims
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1. A method comprising:
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forming a cavity in a first side of a first silicon wafer; forming an oxide layer on the first side and in the cavity; bonding the first side of the first silicon wafer to a first side of a second silicon wafer; forming a gap control structure from a second side of the second silicon wafer, wherein the gap control structure and the second silicon wafer are a single continuous component; forming a MEMS (micro-electro-mechanical systems) structure in the second silicon wafer; and eutecticly bonding a standoff formed from the second side of the second silicon wafer to the third silicon wafer, wherein the gap control structure is distinct from the standoff eutecticly bonding the second silicon wafer to the third silicon wafer, the eutectic bonding includes pressing the second silicon wafer to a structure formed on a third silicon wafer, and the gap control structure remains in contact with the structure on the third silicon wafer after the eutectic bonding. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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bonding a handle substrate to a structural layer; etching the structural layer to form standoffs; forming a gap control structure from a second side of the structural layer by etching; forming a MEMS (micro-electro-mechanical systems) structure in the structural layer; and eutecticly bonding the standoffs formed from the structural layer to an IC (integrated circuit) substrate, wherein the gap control structure is distinct from the standoffs eutecticly bonding the structural layer to the IC substrate, a gap is formed between the MEMS structure and the IC substrate, and the gap control structure remains in contact with a structure formed on the IC substrate after the eutectic bonding. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification