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Crystal of nitride of group-13 metal on periodic table, and method for producing the same

  • US 10,309,038 B2
  • Filed: 12/14/2017
  • Issued: 06/04/2019
  • Est. Priority Date: 02/22/2013
  • Status: Active Grant
First Claim
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1. A method for producing a GaN crystal, the method comprising:

  • growing the GaN crystal on a seed crystal,wherein;

    the seed crystal is a GaN substrate having a (000-1) plane as a main plane;

    the (000-1) plane surface is partially covered with a growth-inhibiting material to provide a linear opening where the (000-1) plane surface is not covered with the growth-inhibiting material; and

    in said growing, a tabular GaN crystal is grown from the linear opening in the <

    000-1>

    direction by an ammonothermal method in the presence of a mineralizer containing fluorine and iodine in such a manner that the main plane orientation of the tabular GaN crystal is different from that of the seed crystal.

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