Crystal of nitride of group-13 metal on periodic table, and method for producing the same
First Claim
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1. A method for producing a GaN crystal, the method comprising:
- growing the GaN crystal on a seed crystal,wherein;
the seed crystal is a GaN substrate having a (000-1) plane as a main plane;
the (000-1) plane surface is partially covered with a growth-inhibiting material to provide a linear opening where the (000-1) plane surface is not covered with the growth-inhibiting material; and
in said growing, a tabular GaN crystal is grown from the linear opening in the <
000-1>
direction by an ammonothermal method in the presence of a mineralizer containing fluorine and iodine in such a manner that the main plane orientation of the tabular GaN crystal is different from that of the seed crystal.
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Abstract
An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
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Citations
13 Claims
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1. A method for producing a GaN crystal, the method comprising:
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growing the GaN crystal on a seed crystal, wherein; the seed crystal is a GaN substrate having a (000-1) plane as a main plane; the (000-1) plane surface is partially covered with a growth-inhibiting material to provide a linear opening where the (000-1) plane surface is not covered with the growth-inhibiting material; and in said growing, a tabular GaN crystal is grown from the linear opening in the <
000-1>
direction by an ammonothermal method in the presence of a mineralizer containing fluorine and iodine in such a manner that the main plane orientation of the tabular GaN crystal is different from that of the seed crystal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for producing a GaN crystal, the method comprising:
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(i) growing a tabular GaN crystal on a seed crystal from a linear opening in a <
000-1>
direction by an ammonothermal method in the presence of a mineralizer containing fluorine and iodine in such a manner that a main plane orientation of the tabular GaN crystal is different from a main plane orientation of the seed crystal, and(ii) growing the GaN crystal on the tabular GaN crystal, wherein the seed crystal is a GaN substrate having a (000-1) plane as the main plane; and the (000-1) plane surface is partially covered with a growth-inhibiting material to provide the linear opening where the (000-1) plane surface is not covered with the growth-inhibiting material. - View Dependent Claims (13)
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Specification