Floating gate based sensor apparatus and related floating gate based sensor applications

• US 10,309,924 B2
• Filed: 06/09/2014
• Issued: 06/04/2019
• Est. Priority Date: 06/07/2013
• Status: Active Grant

• Current Assignee: Cornell University
• Original Assignee: Cornell University
• Inventors: Jayant, Krishna, Kan, Edwin C.
• Primary Examiner(s): Bhat, Narayan K
• Application Number:
  US14/896,010
• Publication Number:
  US 20160131613A1
• Time in Patent Office: 1,821 Days
• CPC Class Codes: C12Q 1/6869 Methods for sequencing
• CPC Class Codes: C12Q 1/703 Viruses associated with AIDS
• CPC Class Codes: C12Q 2527/119 pH
• CPC Class Codes: C12Q 2565/607 being a sensor, e.g. electrode
• CPC Class Codes: C12Q 2600/158 Expression markers
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4146 involving nanosized elements, e.g. nanotubes, nanowires
• CPC Class Codes: H01L 29/42328 with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
• CPC Class Codes: H01L 29/42364 characterised by the insulating layer, e.g. thickness or uniformity H01L29/42324 and H01L29/4234 take precedence

Abstract

A floating gate based sensor apparatus includes at least two separate electrical bias components with respect to a floating gate based sensor surface within the floating gate based sensor apparatus. By including the at least two electrical bias components, the floating gate based sensor apparatus provides enhanced capabilities for biomaterial and non-biomaterial detection and manipulation while using the floating gate based sensor apparatus.

Claims

1. A multi-gate transistor sensor comprising:

a substrate layer structured to be underneath and in physical contact with a portion of a floating gate layer, wherein a first dielectric layer lies between the substrate layer and another portion of the floating gate layer;

a sensing gate layer structured to be on top of the floating gate layer with a second dielectric layer lying between the floating gate layer and the sensing gate layer;

a control gate structured to be on top of the floating gate layer with the oxide layer between the floating gate layer and the control gate, wherein the floating gate layer is capacitively coupled to the control gate and the sensing gate layer;

a liquid sample chamber structured to be on top of the sensing gate layer; and

a reference electrode in the liquid sample chamber, wherein the reference electrode is in physical contact with the liquid and the sensing gate layer is in physical contact with the liquid.

2. The multi-gate transistor sensor of claim 1, wherein the control gate is adjacent to the sensing gate layer and separated from the liquid sample chamber by a passivation layer.

3. The multi-gate transistor sensor of claim 1, wherein the control gate and the sensing gate layer are capacitively coupled to the floating gate.

4. The multi-gate transistor sensor of claim 1, wherein the first dielectric layer and the second dielectric layer have different thicknesses.

5. The multi-gate transistor sensor of claim 1, wherein the first dielectric layer and the second dielectric layer have different dielectric constants.

6. The multi-gate transistor sensor of claim 1, wherein the sensing gate layer comprises one or more of a dielectric material, a conductor material, a metal conductor material, or a polysilicon conductor material.

7. The multi-gate transistor sensor of claim 1, wherein the substrate comprises a bulk semiconductor substrate.

8. The multi-gate transistor sensor of claim 1, wherein the substrate comprises a semiconductor-on-insulator substrate.

9. The sensor apparatus of claim 1, wherein the control gate electrically biases the sensing gate layer with respect to the substrate.

10. The multi-gate transistor sensor of claim 1, wherein the reference electrode electrically biases a sample within the liquid chamber with respect to the sensing gate layer.

11. The multi-gate transistor sensor of claim 1, wherein the reference electrode electrically biases a sample within the liquid chamber with respect to the sensing gate layer.

12. The multi-gate transistor sensor of claim 1, wherein a coupling capacitance between the reference electrode and a fluid in the liquid sample chamber is larger than a sensing gate capacitance between the sensing gate layer and the fluid.

13. The multi-gate transistor sensor of claim 1, wherein with respect to the substrate, the reference electrode is biased with a direct current potential that is positive or negative, or biased with the direct current bias with a superimposed alternating current bias.

14. The multi-gate transistor sensor of claim 1, wherein the reference electrode is electrically coupled to the substrate.

15. The multi-gate transistor sensor of claim 1, wherein the reference electrode is electrically floating with respect to substrate layer.

16. The multi-gate transistor sensor of claim 14, wherein the control gate is biased with respect to the substrate layer to enable electron tunneling from the substrate layer to the floating gate layer or from the floating gate layer to the control gate.

17. The multi-gate transistor sensor of claim 1, wherein electron tunneling out of the floating gate layer to the control gate leaves a net positive charge on the floating gate layer and a positive electric field with respect to the reference electrode.

18. The multi-gate transistor sensor of claim 1, wherein electron tunneling into the floating gate layer causes a negative electric field with respect to reference electrode.

19. The multi-gate transistor sensor of claim 1, wherein a charge on the floating gate layer attracts or repels a biomolecule on a surface of the sensing gate layer.

20. The multi-gate transistor sensor of claim 1, wherein a charge on the floating gate layer causes a new electric field in the second dielectric with respect to the reference electrode and the substrate layer.

21. The multi-gate transistor sensor of claim 1, wherein a charge on the floating gate layer electrically stimulates one or more cells.

22. The multi-gate transistor sensor of claim 1, wherein the reference electrode is biased with an alternating current signal and the control gate is biased by a direct current signal.

23. A multi-gate transistor sensor comprising:

a gate layer structured to be underneath and in physical contact with a first dielectric layer;

a floating gate layer structured to be on top of the first dielectric layer, wherein a second dielectric layer is structured to be on top of the floating gate layer;

a sensing layer structured to be on top of the second dielectric layer, wherein the floating gate is capacitively coupled to the floating gate layer and the sensing gate;

a liquid sample chamber structured to be on top of the sensing gate layer; and

a reference electrode above the sensing layer so that when liquid is in the liquid sample chamber, the reference electrode is in physical contact with the liquid and the sensing layer is in physical contact with the liquid, wherein a charge on the floating gate layer attracts or repels a biomolecule on a surface of the sensing layer.

24. The multi-gate transistor sensor of claim 23, wherein the control gate and the sensing layer are capacitively coupled to the floating gate.

25. The multi-gate transistor sensor of claim 23, wherein the sensing layer comprises one or more of a dielectric material, a conductor material, a metal conductor material, or a polysilicon conductor material.

26. The multi-gate transistor sensor of claim 23, wherein the reference electrode is structured to electrically bias a sample within the liquid chamber with respect to the sensing layer.

27. The multi-gate transistor sensor of claim 23, wherein the reference electrode electrically biases a sample within the liquid chamber with respect to the sensing layer.