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Method and system for lithography process-window-maximizing optical proximity correction

  • US 10,310,371 B2
  • Filed: 05/02/2016
  • Issued: 06/04/2019
  • Est. Priority Date: 12/18/2008
  • Status: Active Grant
First Claim
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1. A method comprising:

  • computing, using a computer hardware system, an analytical function of a process condition parameter that approximates an aerial or resist image value across a process window for each of a plurality of evaluation points in a target pattern for a lithographic process;

    determining a target value of the image value for each evaluation point based on the analytical function and a nominal condition comprising a nominal value of the process condition parameter, wherein determining the target value for each evaluation point is performed such that the process window about the nominal value of the process condition parameter is increased or maximized; and

    performing, by the computer hardware system, optical proximity correction on the target pattern, using the target value as an optimizing target for each evaluation point, for physically manufacturing a physical patterning device based on the target pattern or for physically performing the lithographic process on a substrate based on the target pattern.

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