Method and system for lithography process-window-maximizing optical proximity correction

• US 10,310,371 B2
• Filed: 05/02/2016
• Issued: 06/04/2019
• Est. Priority Date: 12/18/2008
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Ye, Jun, Cao, Yu, Feng, Hanying
• Primary Examiner(s): Aisaka, Bryce M
• Application Number:
  US15/144,242
• Publication Number:
  US 20160246168A1
• Time in Patent Office: 1,128 Days
• Field of Search: 716 53
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G06F 2119/18 Manufacturability analysis or optimisation for manufacturability
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P₀+ƒ²·P_b with a threshold of T+Vε for contours, where P_O represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “P_b” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.

Claims

1. A method comprising:

computing, using a computer hardware system, an analytical function of a process condition parameter that approximates an aerial or resist image value across a process window for each of a plurality of evaluation points in a target pattern for a lithographic process;

determining a target value of the image value for each evaluation point based on the analytical function and a nominal condition comprising a nominal value of the process condition parameter, wherein determining the target value for each evaluation point is performed such that the process window about the nominal value of the process condition parameter is increased or maximized; and

performing, by the computer hardware system, optical proximity correction on the target pattern, using the target value as an optimizing target for each evaluation point, for physically manufacturing a physical patterning device based on the target pattern or for physically performing the lithographic process on a substrate based on the target pattern.

2. The method according to claim 1, wherein the process window comprises a range of a specific process parameter within which a resist critical dimension, and therefore one or more image values, is contained in a pre-defined range.

3. The method according to claim 1, wherein the determining the target value of the image value comprises using a numerical method.

4. The method according to claim 1, wherein an analytical target image value is given for best focus.

5. The method according to claim 1, wherein the computing the analytical function comprises computing a polynomial function.

6. The method according to claim 1, further comprising re-determining the target value for each evaluation point at each of a plurality of optical proximity correction iterations.

7. A method comprising:

forming an analytical function of a process condition parameter of a lithographic process to approximate a value of an aerial or resist image characteristic;

approximating values of the image characteristic across a plurality of values of the process condition parameter for each of a plurality of evaluation points in a target pattern using the analytical function;

determining, using a computer hardware system, a target value of the image characteristic for each evaluation point based on the approximated values of the image characteristic corresponding to a maximum range of values of the process condition parameter; and

performing, by the computer hardware system, optical proximity correction on the target pattern, using the target value as an optimizing target for each evaluation point, for physically manufacturing a physical patterning device based on the target pattern or for physically performing the lithographic process on a substrate based on the target pattern.

8. The method according to claim 7, wherein the maximum range of values of the process condition parameter corresponds to a process window comprising a range of a specific process parameter within which a critical dimension, and therefore image characteristic value, is contained in a pre-defined range.

9. The method according to claim 7, wherein an analytical target image characteristic value is given for best focus.

10. The method according to claim 7, wherein forming the analytical function comprises forming a polynomial function.

11. The method according to claim 7, further comprising re-determining the target value for each evaluation point at each of a plurality of optical proximity correction iterations.

12. A non-transitory computer-readable storage medium having computer-executable instructions stored therein to cause a computer to at least:

compute an analytical function of a process condition parameter that approximates an aerial or resist image value across a process window for each of a plurality of evaluation points in a target pattern;

determine a target value of the image value for each evaluation point based on the analytical function and a nominal condition comprising a nominal value of the process condition parameter, wherein determining the target value for each evaluation point is performed such that the process window about the nominal value of the process condition parameter is increased or maximized; and

perform optical proximity correction on the target pattern, using the target value as an optimizing target for each evaluation point, for physically manufacturing a physical patterning device based on the target pattern or for physically performing the lithographic process on a substrate based on the target pattern.

13. The storage medium according to claim 12, wherein the process window comprises a range of a specific process parameter within which a critical dimension, and therefore image value, is contained in a pre-defined range.

14. The storage medium according to claim 12, wherein the computer-executable instructions configured to determine the target value of the image value are configured to use a numerical method.

15. The storage medium according to claim 12, wherein an analytical target image value is given for best focus.

16. The storage medium according to claim 12, wherein the computer-executable instructions configured to compute the analytical function are configured to compute a polynomial function.

17. The storage medium according to claim 12, wherein the computer-executable instructions are further configured to cause a computer to re-compute the target value for each evaluation point at each of a plurality of optical proximity correction iterations.

18. A non-transitory computer-readable storage medium having computer-executable instructions stored therein to cause a computer to at least:

form an analytical function of a process condition parameter of a lithographic process to approximate a value of an aerial or resist image characteristic;

approximate values of the image characteristic across a plurality of values of the process condition parameter for each of a plurality of evaluation points in a target pattern using the analytical function;

determine a target value of the image characteristic for each evaluation point based on the approximated values of the image characteristic corresponding to a maximum range of values of the process condition parameter; and

perform optical proximity correction on the target pattern, using the target value as an optimizing target for each evaluation point, for physically manufacturing a physical patterning device based on the target pattern or for physically performing the lithographic process on a substrate based on the target pattern.

19. The storage medium according to claim 18, wherein the maximum range of values of the process condition parameter correspond to a process window comprising a range of a specific process parameter within which a critical dimension, and therefore image characteristic value, is contained in a pre-defined range.

20. The storage medium according to claim 18, wherein an analytical target image characteristic value is given for best exposure dose.