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Resistance change memory

  • US 10,311,929 B2
  • Filed: 12/08/2017
  • Issued: 06/04/2019
  • Est. Priority Date: 06/10/2015
  • Status: Active Grant
First Claim
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1. A resistance change memory comprising:

  • a semiconductor substrate;

    a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate;

    an insulating layer covering the transistor;

    a first conductive line connected to the first terminal and provided on the insulating layer;

    a second conductive line provided on the insulating layer; and

    a resistance change element connected between the second terminal and the second conductive line,wherein the first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.

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