Metal-insulator-metal capacitor structure
First Claim
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1. A method comprising:
- forming at least one gate structure;
removing a material from the at least one gate structure to form a trench;
recessing an insulator material formed outside of the trench to form a ledge;
depositing a capacitor material within the trench and at edges of the trench;
etching the capacitor material to form a stepped feature having a plurality of steps at each of the edges of and inside the trench;
forming a first contact within the trench and in contact with a first conductive material of the capacitor material;
forming a second contact in contact with a second conductive material of the capacitor material at least partially outside of the trench by forming a contact trench in the insulator material to expose the capacitor material and filling the contact trench with a metal material; and
forming a capping material on top of the capacitor material,wherein;
the first conductive material is a top electrode plate,the second conductive material is a bottom electrode plate,the bottom electrode plate is deposited on the ledge to increase surface contact area and forms a top step of the stepped feature at each of the edges of the trench,the first contact is formed through the capping material and in direct contact with the top electrode plate within the trench,the second contact is formed in direct contact with the top step of the stepped feature at each of the edges of the trench, andthe capping material comprises a low-k dielectric material and is formed to have a stepped configuration at each of the edges of the trench.
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Abstract
The disclosure is directed to semiconductor structures and, more particularly, to Metal-Insulator-Metal (MIM) capacitor structures and methods of manufacture. The method includes: forming at least one gate structure; removing material from the at least one gate structure to form a trench; depositing capacitor material within the trench and at an edge or outside of the trench; and forming a first contact in contact with a first conductive material of the capacitor material and a second contact in contact with a second conductive material of the capacitor material.
25 Citations
15 Claims
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1. A method comprising:
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forming at least one gate structure; removing a material from the at least one gate structure to form a trench; recessing an insulator material formed outside of the trench to form a ledge; depositing a capacitor material within the trench and at edges of the trench; etching the capacitor material to form a stepped feature having a plurality of steps at each of the edges of and inside the trench; forming a first contact within the trench and in contact with a first conductive material of the capacitor material; forming a second contact in contact with a second conductive material of the capacitor material at least partially outside of the trench by forming a contact trench in the insulator material to expose the capacitor material and filling the contact trench with a metal material; and forming a capping material on top of the capacitor material, wherein; the first conductive material is a top electrode plate, the second conductive material is a bottom electrode plate, the bottom electrode plate is deposited on the ledge to increase surface contact area and forms a top step of the stepped feature at each of the edges of the trench, the first contact is formed through the capping material and in direct contact with the top electrode plate within the trench, the second contact is formed in direct contact with the top step of the stepped feature at each of the edges of the trench, and the capping material comprises a low-k dielectric material and is formed to have a stepped configuration at each of the edges of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification