Ultra-wideband light emitting diode and optical detector comprising aluminum gallium arsenide and method of fabricating the same
First Claim
1. A light-emitting diode (LED) comprising:
- a substrate;
a carrier confinement (CC) region positioned over the substrate, the CC region defining;
a first CC layer comprising aluminum gallium arsenide; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide;
an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps);
a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and
an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein;
the active region comprises gallium arsenide;
the active region is at least one of a quantum well structure and a multi quantum well structure;
the first barrier layer has an aluminum composition between 25% and 45%; and
the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view.
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Accused Products
Abstract
Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a light-emitting diode (LED) includes a substrate, a carrier confinement (CC) region positioned over the substrate, an active region positioned over the CC region, and an electron blocking layer (EBL) positioned over the active region. The CC region includes a first CC layer comprising aluminum gallium arsenide and a second CC layer position over the first CC layer. The second CC layer and the electron blocking layer (EBL) also each include aluminum gallium arsenide. The active region is configured to have a transient response time of less than 500 picoseconds (ps).
31 Citations
20 Claims
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1. A light-emitting diode (LED) comprising:
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a substrate; a carrier confinement (CC) region positioned over the substrate, the CC region defining; a first CC layer comprising aluminum gallium arsenide; and a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide; an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps); a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein; the active region comprises gallium arsenide; the active region is at least one of a quantum well structure and a multi quantum well structure; the first barrier layer has an aluminum composition between 25% and 45%; and the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of forming a light-emitting diode (LED), comprising:
providing an epitaxial structure on a substrate, the epitaxial structure comprising; a carrier confinement (CC) region positioned over the substrate, the CC region defining; a first CC layer comprising aluminum gallium arsenide; and a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide; an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps); a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein; the active region comprises gallium arsenide; the active region is at least one of a quantum well structure and a multi quantum well structure; the first barrier layer has an aluminum composition between 25% and 45%; and the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view.
Specification