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Ultra-wideband light emitting diode and optical detector comprising aluminum gallium arsenide and method of fabricating the same

  • US 10,312,410 B2
  • Filed: 12/29/2017
  • Issued: 06/04/2019
  • Est. Priority Date: 02/09/2016
  • Status: Active Grant
First Claim
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1. A light-emitting diode (LED) comprising:

  • a substrate;

    a carrier confinement (CC) region positioned over the substrate, the CC region defining;

    a first CC layer comprising aluminum gallium arsenide; and

    a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide;

    an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps);

    a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and

    an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein;

    the active region comprises gallium arsenide;

    the active region is at least one of a quantum well structure and a multi quantum well structure;

    the first barrier layer has an aluminum composition between 25% and 45%; and

    the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view.

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