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High power density inverter (II)

  • US 10,312,801 B2
  • Filed: 06/23/2016
  • Issued: 06/04/2019
  • Est. Priority Date: 07/09/2015
  • Status: Active Grant
First Claim
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1. A single phase, non-insulated, miniaturized DC/AC power inverter (1) having an output power density higher than 3000 W/dm3 and comprising:

  • a DC input;

    an AC output;

    at least a H full-bridge topology switching circuit (201, 202) having an input connected to the DC input and an output connected to the AC output, and comprising switches made of wide-band semiconductors and preferably of gallium nitride or GaN semiconductors;

    at least one common mode noise Electromagnetic Interference (EMI) filter (100) connected between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said common mode noise filters (100) being referenced to an earth shielding or directly to earth (204), said common noise filters (100) comprising filtering inductors and so-called Y capacitors;

    at least one differential mode noise Electromagnetic Interference (EMI) filter (101) connected, in series with a corresponding common mode noise filter (100), between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said differential mode noise filters (101) comprising so-called X filtering capacitors and optionally inductors;

    a ripple-compensating active filter comprising a switching half-bridge topology (203) provided in parallel with the H full-bridge switching circuit and connected to a LC filter, made of at least one inductor (L6) and at least one storage capacitor (C5);

    wherein said power inverter (1) is packaged in a casing made of an external electrically conductive enclosure (501) containing a fan blowing in an axial direction to a side face of the casing and, in a stacked elevation arrangement, successively from a bottom side to a top side, a layer of active filter capacitors (514), a heatsink (512), a layer of wideband semiconductors switches (509) connected to a Printed Circuit Board (PCB) with thermal vias (510) and a layer of active filtering inductors (504), the fan and the component stacked arrangement being designed so as, in operation, an external temperature of the casing does not overcome 60°

    C. in any point, for an ambient temperature of maximum 30°

    C. under a maximum load of 2 kVA.

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